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Method for reducing surface dark current of image sensor and image sensor

An image sensor, surface growth technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as limited repair ability, achieve the effects of reducing noise, improving imaging quality, and reducing surface dark current

Pending Publication Date: 2020-12-22
UNITED MICROELECTRONICS CENT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is the problem of limited repair ability in the traditional III-V group material surface passivation method, and provides a method for reducing the dark current on the surface of an image sensor and an image sensor

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  • Method for reducing surface dark current of image sensor and image sensor
  • Method for reducing surface dark current of image sensor and image sensor
  • Method for reducing surface dark current of image sensor and image sensor

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Embodiment Construction

[0012] A method for reducing dark current on the surface of an image sensor provided by the present invention and specific implementations of the image sensor will be described in detail below with reference to the accompanying drawings.

[0013] attached figure 1 Shown is a schematic diagram of the steps described in a specific embodiment of the present invention, including: step S10, providing an image sensor; step S11, growing an interface repair layer on the surface of the image sensor, and the interface repair layer uses an oxide material; step S12, A charge-trapping layer is grown on the surface of the interface repair layer, and the charge-trapping layer adopts a high dielectric constant material to trap charges on the surface of the sensor; step S13, grow a metal oxide layer on the surface of the charge-trapping layer, and the metal The material characteristic of the oxide layer is that the Gibbs free energy is higher than the Gibbs free energy of the sensor surface el...

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Abstract

The invention provides a method for reducing surface dark current of an image sensor and the image sensor. The method comprises the following steps: growing an interface repairing layer on the surfaceof the image sensor, the interface repairing layer being made of an oxide material; growing a charge trapping layer on the surface of the interface repair layer, the charge trapping layer being madeof a high dielectric constant material and being used for carrying out charge trapping on the surface of the sensor; growing a metal oxide layer on the surface of the charge trapping layer, the material characteristic of the metal oxide layer being that the Gibbs free energy is higher than the Gibbs free energy of the element oxide on the surface of the sensor; and performing annealing. Accordingto the technical scheme, the surface dark current of the image sensor can be reduced, noise points of the image sensor are reduced, and imaging quality is remarkably improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for reducing dark current on the surface of an image sensor and an image sensor. Background technique [0002] For III-V family (InGaAs, InP, InSb, etc.) image sensors, the imaging quality of the image sensor is an important issue. After the thinning of the backside process, the exposed III-V material surface will have defects, dangling bonds and damage, which will generate surface dark current and affect the imaging quality of the image sensor. The surface dark current increases the noise of the image sensor sharply, and the imaging quality is greatly reduced, and it is even difficult to image effectively. Therefore, reducing the surface dark current has become the key to the application of III-V image sensors. Contents of the invention [0003] The technical problem to be solved by the present invention is the problem of limited repair ability in the traditional III-V...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14694H01L27/14698H01L27/1462H01L27/14643
Inventor 黄文军陈世杰唐昭焕张斌
Owner UNITED MICROELECTRONICS CENT CO LTD
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