A wide bandgap semiconductor power device parameter testing platform and method

Abstract

The invention relates to a wide bandgap semiconductor power device parameter testing platform and method. The platform includes: a DC power supply module, two capacitors, a load, an inductor and a drive module; Node connection, the other end of the capacitor is respectively connected to the negative pole of the DC power supply module, one end of another capacitor, one end of the load, and the device under test T 2 source, device under test T 4 The source is connected; the other end of the other capacitor is connected to the other end of the load, the device under test T 3 The drain is connected; the third node is respectively connected to the device under test T 3 source, device under test T 4 The drain connection of the inductor; one end of the inductor is respectively connected to the device under test T 1 source, device under test T 2 The drain is connected to the other end, and the other end is connected to the second node; the working mode of the device under test on the platform basically covers the actual and commonly used working conditions, and the measured characteristic parameters basically meet the requirements, and only two experiments are required to complete all the parameters. test.

Description

technical field [0001] The invention relates to the field of wide bandgap semiconductor power devices and power electronic circuits, and aims to provide a new type of switching characteristic and reliability parameter testing platform and supporting testing method for new wide bandgap semiconductor devices represented by SiC and GaN. Background technique [0002] Wide bandgap semiconductor power devices have the advantages of high switching speed and low on-resistance, and are increasingly used in power electronic converters. In view of the device material and structure process, there are many factors that affect the switching characteristics and reliability parameters of wide bandgap semiconductor devices. Comprehensive and accurate testing of device switching characteristics and reliability parameters under possible switching conditions in practical power electronics applications is of great importance to device manufacturers. Device characteristics, performance improvemen...

AI Technical Summary

Problems solved by technology

[0007] 2) Switching loss of power semiconductor devices

[0009] 3) Conduction loss of power semiconductor devices

[0018] (1) The platform simply tests the loss characteristics of power devices, and the test type is single

[0019] (2) This platform is only for hard switching, if you want to test the loss of soft switching, you need to modify the circuit

However, this platform can only test the reliability parameters of power devices under zero-voltage turn-on conditions, and cannot test the reliability parameters of power devices under zero-current turn-off conditions.

[0027] (2) Under hard switching conditions, the inductor current will increase with the number of switching times, and it is impossible to test the reliability parameters of power devices after power cycles at rated currents

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