A silicon-based all-silicon surface absorption detector with a grating structure and its preparation method

A technology of grating structure and silicon surface, applied in the field of detectors, can solve the problem of low responsivity, achieve the effect of improving responsivity and increasing absorption area

Active Publication Date: 2022-06-24
SANMING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the proportion of surface states in the silicon waveguide is small, so the responsivity is small

Method used

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  • A silicon-based all-silicon surface absorption detector with a grating structure and its preparation method
  • A silicon-based all-silicon surface absorption detector with a grating structure and its preparation method

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Embodiment Construction

[0029] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiment of this invention, and it is not an embodiment of all. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention.

[0030] In the description of the present invention, it should be unders...

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Abstract

The invention provides a silicon-based all-silicon surface absorption detector with a grating structure, comprising: a substrate layer, the substrate layer is SOI; a silicon optical waveguide layer, formed on the substrate layer; a grating layer, formed on the substrate layer On the bottom layer, and coupled with the silicon optical waveguide layer; wherein, the grating layer includes an intrinsic region and a P-type region and an N-type region located on both sides of the intrinsic region; electrodes, including an anode and a cathode; wherein , the anode is disposed in the N-type region, and the cathode is disposed in the P-type region. Compared with the straight waveguide structure, the present invention increases the surface area through the surface grating structure, thereby effectively increasing the absorption area, thereby improving the responsivity; the grating structure forms a resonant cavity, so that the light energy is better confined inside the grating structure and absorbed multiple times .

Description

technical field [0001] The invention relates to the field of detectors, in particular to a silicon-based all-silicon surface absorption detector with a grating structure. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support for the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been a boom in the construction of trunk transmission networks worldwide, and transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also faced with opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon-based optoelectronic devices hav...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/0352H01L31/105H01L31/18
CPCH01L31/02327H01L31/035281H01L31/105H01L31/1804Y02P70/50
Inventor 崔积适王娟崔文静陈洪敏
Owner SANMING UNIV
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