Silicon-based all-silicon surface absorption detector with grating structure and preparation method thereof

A technology of grating structure and silicon surface, applied in the field of detectors, can solve the problem of low responsivity, achieve the effect of improving responsivity and increasing absorption area

Active Publication Date: 2021-01-08
SANMING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the proportion of surface states in the silicon waveguide is small, so the responsivity is small

Method used

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  • Silicon-based all-silicon surface absorption detector with grating structure and preparation method thereof
  • Silicon-based all-silicon surface absorption detector with grating structure and preparation method thereof

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Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is some embodiments of the present invention, but not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention.

[0030] In describing the present invention, it should be understood tha...

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Abstract

The invention provides a silicon-based all-silicon surface absorption detector with a grating structure, and the detector comprises a substrate layer which is an SOI; a silicon optical waveguide layerwhich is formed on the substrate layer; a grating layer which is formed on the substrate layer and is in coupling connection with the silicon optical waveguide layer, wherein the grating layer comprises an intrinsic region, and a P-type region and an N-type region which are positioned on two sides of the intrinsic region; and an electrode including an anode and a cathode, wherein the anode is arranged in the N-type region, and the cathode is arranged in the P-type region. Compared with a straight waveguide structure, the surface area is increased through the surface grating structure, so theabsorption area is effectively increased, and the responsivity is improved; the grating structure forms a resonant cavity, so that the light energy is well limited in the grating structure and is absorbed for multiple times.

Description

technical field [0001] The invention relates to the field of detectors, in particular to a silicon-based all-silicon surface absorption detector with a grating structure. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support of the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been an upsurge in the construction of backbone transmission networks worldwide, and the transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also facing opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon-based optoelectronic devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/0352H01L31/105H01L31/18
CPCH01L31/02327H01L31/035281H01L31/105H01L31/1804Y02P70/50
Inventor 崔积适王娟崔文静陈洪敏
Owner SANMING UNIV
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