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Method of patterning material layer

A material layer and patterning technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unsatisfactory processes

Inactive Publication Date: 2021-02-02
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing photolithographic process is generally adequate for its intended purpose, the process is not completely satisfactory in all respects

Method used

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  • Method of patterning material layer
  • Method of patterning material layer
  • Method of patterning material layer

Examples

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Embodiment Construction

[0012] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are examples only and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which additional features may be formed between the first feature and the second feature. An embodiment is formed between the second features such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for purposes of simplicity and clarity and does not in...

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Abstract

The invention provides a method of patterning a material layer, which includes the following steps. A first material layer is formed over a substrate, and the first material layer includes a first metal compound. Through a first photomask, portions of the first material layer is exposed with a gamma ray, wherein a first metal ion of the first metal compound in the portions of the first material layer is chemically reduced to a first metal grain. Other portions of the first material layer are removed to form a plurality of first hard mask patterns including the first metal grain.

Description

technical field [0001] Embodiments of the present invention relate to a method for patterning a material layer. Background technique [0002] Integrated circuit (IC) design becomes more challenging as IC technology continues to evolve toward smaller feature sizes such as 32 nm, 28 nm, 20 nm, or less than 20 nm. Smaller feature sizes require ever-shrinking pitch (ie, the center-to-center distance between IC features) and critical dimension (ie, the smallest achievable size for an IC feature). Although existing photolithographic processes are generally adequate for their intended purposes, said processes are not entirely satisfactory in all respects. Contents of the invention [0003] A method for patterning a material layer according to an embodiment of the present invention includes the following steps. A first material layer is formed above the substrate, and the first material layer includes a first metal compound. The portion of the first material layer is exposed wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
CPCH01L21/31144H01L21/31105H01L21/0337H01L21/32139H01L21/0338
Inventor 周友华庄国胜
Owner TAIWAN SEMICON MFG CO LTD