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Extreme ultraviolet lithography light source mask optimization method

A technology of extreme ultraviolet lithography and optimization method, which is applied in the field of extreme ultraviolet lithography light source mask optimization, and can solve problems such as increase of optimization dimension, decrease of optimization speed, decrease of optimization efficiency and optimization ability of PSO algorithm, etc.

Pending Publication Date: 2021-02-23
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

This technology can be easily migrated and applied to EUV lithography, but when the sampling points of the light source and mask gradually increase, the optimization dimension increases rapidly, and the optimization efficiency and optimization ability of the PSO algorithm are greatly reduced
In addition, the complex lithography imaging model of EUV will also lead to a significant drop in optimization speed, so it is necessary to use an optimization algorithm with better performance

Method used

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  • Extreme ultraviolet lithography light source mask optimization method
  • Extreme ultraviolet lithography light source mask optimization method
  • Extreme ultraviolet lithography light source mask optimization method

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Embodiment Construction

[0068] The present invention will be further described below in conjunction with embodiment, but should not limit protection scope of the present invention with this embodiment.

[0069] Specific steps are as follows:

[0070] Step 1, set the light source encoding and decoding method and mask encoding and decoding method:

[0071] The light source is represented by a two-dimensional matrix S, and the size of the matrix is ​​N S ×N S , N S =51. Each element of the matrix represents a light source point, and the value of the element is a real number, representing the intensity of the light source point, and the value range is [0,1]. The position of the light source point in the matrix is ​​expressed as S(m,n), and in the frequency domain coordinates as S(f s , g s ), where 1≤m≤N S , 1≤n≤N S , -1≤f s ≤1, -1≤g s ≤1. The inward coherence factor and the external coherence factor of the light source are expressed as σ in = 0.4 and σ out =0.9, in order to ensure the symme...

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Abstract

An extreme ultraviolet lithography light source mask optimization method comprises the following steps: representing a light source and a mask pattern by adopting pixels, calculating a photoresist image through a thick mask imaging model corrected by point pulse, and taking a pattern error between the photoresist pattern and a target pattern as an evaluation function to obtain a mask pattern; andoptimizing light source distribution and mask patterns by adopting a particle swarm optimization (SLPSO) algorithm based on a social learning mechanism. According to the method, the evaluation function is established by using the extreme ultraviolet lithography thick mask imaging model, so the imaging calculation precision in the optimization process is improved. In addition, the optimization efficiency and the optimization capability are effectively improved by using the SLPSO algorithm, and the imaging quality is improved.

Description

technical field [0001] The invention relates to the technical field of enhancing the resolution of extreme ultraviolet lithography, in particular to a mask optimization method for a light source of extreme ultraviolet lithography. Background technique [0002] Extreme ultraviolet lithography (EUVL) technology is an extremely important lithography technology in the mass production of chips with 7nm and below technology nodes. Similar to deep ultraviolet lithography (DUVL), in extreme ultraviolet lithography, the diffraction effect of the mask will cause the degradation of lithographic imaging quality, so resolution enhancement technology is required. Source mask optimization (SMO) technology is an important resolution enhancement technology, which can improve the imaging quality and increase the process window by jointly optimizing the source distribution and mask pattern. Masks with a thickness of hundreds of nanometers make EUV imaging calculations complicated. In addition...

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Application Information

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IPC IPC(8): G03F1/76G03F1/80G03F7/20
CPCG03F1/76G03F1/80G03F7/70433
Inventor 张子南李思坤王向朝成维胡少博刘珍
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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