Integrated circuit device

A technology for integrated circuits and devices, which is applied in the field of integrated circuit devices and can solve the problems of complex operation circuits and interconnection structures.

Pending Publication Date: 2021-03-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the multifunctionalization of information communication devices, integrated circuit devices including memory devices have become large-capacity storage and highly integrated, so the size of memory cells has been gradually reduced, and memory devices included in memory devices Operating circuits and interconnect structures for operation and electrical connection are becoming more complex

Method used

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  • Integrated circuit device
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Examples

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Embodiment Construction

[0018] Hereinafter, example embodiments of the inventive concepts will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same elements in the drawings, and repeated descriptions thereof will be omitted.

[0019] figure 1 is a block diagram of an integrated circuit device 10 according to an example embodiment of the inventive concept.

[0020] refer to figure 1 , the integrated circuit device 10 may include a memory cell array 20 and a peripheral circuit 30 . The memory cell array 20 may include a plurality of memory cell blocks BLK1, BLK2, . . . and BLKn. Each of the plurality of memory cell blocks BLK1, BLK2, . . . , and BLKn may include a plurality of memory cells. The memory cell blocks BLK1, BLK2, . . . and BLKn may be connected to the peripheral circuit 30 through bit lines BL, word lines WL, string selection lines SSL, and ground selection lines GSL.

[0021] Peripheral circuitry 30 may include row decod...

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PUM

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Abstract

An integrated circuit device includes a memory including a memory cell insulation surrounding a memory stack and a memory cell interconnection unit, a peripheral circuit including a peripheral circuitregion formed on a peripheral circuit board, and a peripheral circuit interconnection between the peripheral circuit region and the memory structure, a plurality of conductive bonding structures on aboundary between the memory cell interconnection and the peripheral circuit interconnection in a first region, the first region overlapping the memory stack in a vertical direction, and a through electrode penetrating one of the memory cell insulation and the peripheral circuit board and extended to a lower conductive pattern included in the peripheral circuit interconnection in a second region,the second region overlapping the memory cell insulation in the vertical direction.

Description

technical field [0001] The inventive concept relates to integrated circuit devices, and more particularly, to integrated circuit devices including nonvolatile memory devices having cell-on-peripheral (COP) structures. Background technique [0002] With the multifunctionalization of information communication devices, integrated circuit devices including memory devices have become large-capacity storage and highly integrated, so the size of memory cells has been gradually reduced, and memory devices included in memory devices Operating circuits and interconnect structures for operation and electrical connection are becoming more complex. Therefore, there is a need for an integrated circuit device including a memory device having a structure having excellent electrical characteristics while increasing the degree of integration. Contents of the invention [0003] The inventive concept provides an integrated circuit device having a structure capable of improving reliability of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11529H01L27/11556H01L27/1157H01L27/11573H01L27/11582
CPCH10B41/35H10B41/41H10B41/27H10B43/35H10B43/40H10B43/27H01L23/481H01L25/18H01L25/50H01L2225/06541H01L24/80H01L2224/08145H01L2224/80815H01L24/08H01L2224/80895H01L2224/80896H01L2224/05546H01L2224/80097H01L2224/9202H10B43/10H10B43/50H01L2224/05556H01L2224/80001H01L21/76898H01L29/788H01L29/66825H01L21/768H01L21/3213H10B41/20H01L2224/05647H01L24/05
Inventor 金灿镐姜东求边大锡
Owner SAMSUNG ELECTRONICS CO LTD
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