Detection method of nickel silicide heat treatment process

Abstract

The invention provides a detection method of a nickel silicide heat treatment process. The detection method comprises the following steps: providing a silicon substrate, and growing an oxide layer onthe silicon substrate; depositing a polycrystalline silicon layer on the oxide layer; depositing a NiPt layer on the polycrystalline silicon layer; performing annealing treatment on the NiPt layer, wherein one part of the NiPt layer reacts with the polycrystalline silicon layer to generate a nickel silicide layer; removing the residual unreacted NiPt layer; and detecting the resistance value of the nickel silicide layer. According to the method, the influence of the bottom silicon substrate is eliminated by growing the oxide layer before NiPt deposition, depositing polycrystalline silicon andthen carrying out NiPt deposition. Before square resistance measurement, the step of removing NiPt is added, and the influence of NiPt on the front layer on the measurement result is eliminated. Therefore, the measurement result and the uniformity are more accurate, and the quality of the nickel silicide process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a detection method for a nickel silicide heat treatment process. Background technique [0002] For the nickel silicide thermal annealing process, the phase transition state of nickel and silicon will affect the electrical properties of the device. The existing monitoring method is to first deposit NiPt (nickel platinum) on the detection sheet, then perform a thermal annealing process, and then directly use the four-point probe method to detect the resistance value of the nickel silicide, as a means for monitoring the nickel silicide thermal annealing process. Since this detection method will be affected by the front layer NiPt (nickel platinum) and the silicon substrate, it will affect the temperature zone adjustment of the thermal annealing process, which will affect the quality of the thermal annealing process and ultimately affect the electrical properties of the device...

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Problems solved by technology

[0004] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of detection method of nickel silicide heat treatment process, be used to solve the influence by front layer NiPt and silicon substrate in the nickel silicide thermal annealing process in the prior art , thus affecting the accuracy of nickel silicide annealing process monitoring

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