Three-dimensional memory and control method thereof
A control method and memory technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of memory cell read interference and high electric field strength, and achieve the purpose of reducing read interference, improving reliability, and reducing read interference. Effect
Active Publication Date: 2021-03-09
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
When performing a read operation on a three-dimensional memory, the same conduction voltage is applied to each memory cell on the memory string formed by the same channel hole. If the channel hole where the memory cell is located has a smaller aperture, then The electric field intensity brought to the memory cell by the turn-on voltage will be relatively large, which will cause read interference to the memory cell after multiple reads
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[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0030] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0031] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...
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The present invention relates to a three-dimensional memory and a control method thereof, the three-dimensional memory comprising a plurality of memory strings, each of the memory strings comprising aplurality of memory cells, the plurality of memory cells comprising a first portion and a second portion; the diameter of a channel structure corresponding to the memory cells of the first portion isless than the diameter of a channel structure corresponding to the memory cells of the second portion. The method comprises the following steps: when a read operation is carried out on a selected memory cell, applying conduction voltages to unselected memory cells, wherein a first conduction voltage is applied to first unselected memory cells in the first portion, a second conduction voltage is applied to second unselected memory cells in the second portion, and the first conduction voltage is smaller than the second conduction voltage. According to the method, the read interference of memorycells with a small channel structure diameter is reduced, and the reliability of the three-dimensional memory is improved.
Description
technical field [0001] The invention relates to the manufacturing field of integrated circuits, in particular to a three-dimensional memory and a control method thereof. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, memory devices with a three-dimensional (3D) structure have been developed and mass-produced in the industry, which improves integration density by three-dimensionally arranging memory cells on a substrate. 3D NAND flash memory is a three-dimensional memory device. As the number of stacked layers increases, the trench holes will become deeper and deeper. Since the upper pore diameter of the channel hole is larger than the lower pore diameter, the difference between the upper pore diameter and the lower pore diameter of the channel hole will increase with the deepening of the channel hole. When performing a read operation on a three-dimensional memory, the same conduction voltage is applied to each memory c...
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IPC IPC(8): G11C16/04G11C16/26G11C16/08G06F3/06
CPCG11C16/0483G11C16/26G11C16/08G06F3/0614G06F3/061Y02D10/00
Inventor 谢学准宋雅丽靳磊赵向南闵园园贾建权
Owner YANGTZE MEMORY TECH CO LTD