A kind of manufacturing method of suspended LED device
A technology of LED devices and manufacturing methods, which is applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of low light extraction efficiency of LEDs, and achieve the effect of improving light extraction efficiency and luminous efficiency
Active Publication Date: 2022-04-05
XIAMEN UNIV +1
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Problems solved by technology
[0005] Based on this, it is necessary to provide a manufacturing method for suspended LED devices to solve the problem of low light extraction efficiency of existing LEDs
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[0035] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, specific embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the specific details described below are only some embodiments of the present invention, and the present invention can also be implemented in many other embodiments different from those described here. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0036] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other e...
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The invention relates to a suspended LED device and a manufacturing method thereof, comprising a substrate, a semiconductor epitaxial layer array, a reflective layer and an electrode; the semiconductor epitaxial layer array includes a plurality of semiconductor epitaxial layers, and the substrate is provided with a raised support column array, The support column array includes a plurality of support columns; the support columns and the substrate are made of conductive materials; the first surface of the semiconductor epitaxial layer is connected to the upper surface of the support columns, and the area of the upper surface of the support columns is smaller than that of the first surface of the semiconductor epitaxial layer The reflective layer covers the upper surface of the substrate and the side surfaces of the support pillars; the second surface of the semiconductor epitaxial layer is connected to the electrode. This suspended LED device supports the semiconductor epitaxial layer of the light-emitting diode through the supporting pillars to form a suspended structure. Since the contact area between the semiconductor epitaxial layer and the supporting pillars is small, the internal stress of the semiconductor epitaxial layer can be released, so the active area The quantum Stark effect can be effectively suppressed, and the luminous efficiency of the device can be significantly improved.
Description
technical field [0001] The invention relates to the technical fields of optoelectronics and semiconductor lasers, in particular to a method for manufacturing a suspended LED device. Background technique [0002] GaN-based light-emitting diodes (LEDs) are widely used in the fields of semiconductor lighting, backlight display, biomedicine, and optical communications due to their excellent performance such as high brightness, low power consumption, and tunable luminous wavelength with changes in the components of the semiconductor materials used. Wide range of applications. The luminous efficiency of LED is jointly determined by internal quantum efficiency and light extraction efficiency. At present, with the advancement of material epitaxial growth technology, the internal quantum efficiency of blue LEDs has reached a relatively high level, so the light extraction efficiency is the key factor limiting the electro-optical conversion efficiency of LEDs. [0003] Light extracti...
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IPC IPC(8): H01L33/20H01L33/10H01L33/22H01L27/15H01L33/00
CPCH01L33/20H01L33/10H01L33/22H01L27/156H01L33/007
Inventor 梅洋谢敏超应磊莹张保平
Owner XIAMEN UNIV