Three-dimensional memory control method, device and storage medium
A technology of a control method and a control device, which is applied in the field of semiconductors and can solve problems such as memory unit interference
Active Publication Date: 2022-04-19
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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[0003] However, there are various challenges in the three-dimensional phase change memory technology, for example, when the selected memory cell is read or written, the memory cells around the selected memory cell interfere with the selected memory cell
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[0040] In order to make the technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention.
[0041] figure 1 It is a schematic diagram of a three-dimensional phase-change memory cell array observed by a scanning electron microscope. from figure 1 It can be seen that the three-dimensional phase change memory chip is composed of a plurality of small memory cell array blocks with a single bit line, word line and memory cells. A three-dimensional phase-change memory generally includes a top bit line, a word line, a bottom bit line, and a memory cell located at the intersection of the bit line and the word line. In practical application, the word line, the top bit line and the bottom bit line are usually formed by a 20nm / 20nm equal width line (L / S, Line / Space) pattern formed after the ...
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Embodiments of the present invention provide a control method, device and storage medium for a three-dimensional memory. Wherein, the method includes: selecting a memory cell in a memory array block of the three-dimensional memory; performing a read operation or a write operation on the selected memory cell; wherein, in the process, applying the first voltage to the selected word line, applying a second voltage to the selected bit line, applying a third voltage to all unselected word lines in the selected memory array block, and applying a fourth voltage to all unselected bit lines in the selected memory array block ; Under the action of the first voltage, the second voltage, the third voltage and the fourth voltage, the voltage difference applied to the bit line and the word line corresponding to the selected memory cell is greater than the threshold voltage of the selector of the selected memory cell , and the voltage difference applied to the bit lines and word lines corresponding to all unselected memory cells in the selected memory array block is less than a preset voltage; the preset voltage is less than a threshold voltage.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a control method, device and storage medium of a three-dimensional memory. Background technique [0002] Three-dimensional phase change memory (phase change memory can be expressed as Phase Change Memory in English, and its abbreviation can be expressed as PCM) is a storage technology that uses chalcogenides as storage media, and uses the resistance difference of materials in different states to save data. Three-dimensional phase-change memory has the advantages of bit-addressable, no data loss after power failure, high storage density, and fast read and write speed, and is considered to be the most promising next-generation memory. [0003] However, there are various challenges in the three-dimensional phase change memory technology, for example, when the selected memory cell is read or written, the memory cells around the selected memory cell interfere with the s...
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IPC IPC(8): G11C13/00
CPCG11C13/0004G11C13/004G11C13/0069G11C2013/0071
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD