Control method and device of three-dimensional memory and storage medium
A control method and memory technology, applied in the semiconductor field, can solve problems such as memory cell interference
Active Publication Date: 2021-03-26
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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[0003] However, there are various challenges in the three-dimensional phase change memory technology, for example, when the selected memory cell is read or written, the memory cells around the selected memory cell interfere with the selected memory cell
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[0040] In order to make the technical solutions and advantages of the embodiments of the present invention more clearly, the specific technical solutions will be described in detail in connection with the accompanying drawings in the embodiment of the present invention.
[0041] figure 1 A schematic diagram of a three-dimensional phase change memory cell array observed by scanning an electron microscope. From figure 1 It can be seen that the three-dimensional phase change memory chip consists of a plurality of small memory cell array blocks having a single bit line, a word line, and a storage unit. The three-dimensional phase change memory typically includes a top line, a word line, a bottom line, and a storage unit located at the intersection of the bit line and the word line. In practical applications, word lines, top bit lines, and bottom bit lines typically be formed by a 20 nm / 20 nm of the patterned process formed by a linear width (L / S, line / space) pattern.
[0042]...
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The embodiment of the invention provides a control method and device of a three-dimensional memory and a storage medium. The method comprises the following steps: selecting one storage unit in one storage array block of the three-dimensional memory; carrying out reading operation or writing operation on the selected storage unit, wherein in the process, a first voltage is applied to a selected word line, a second voltage is applied to a selected bit line, a third voltage is applied to all unselected word lines in the selected memory array block, and a fourth voltage is applied to all unselected bit lines in the selected memory array block; under the action of the first voltage, the second voltage, the third voltage and the fourth voltage, the voltage difference applied to the bit line andthe word line corresponding to the selected memory cell is greater than the threshold voltage of the selector of the selected memory cell; the voltage difference applied to the bit lines and the wordlines corresponding to all unselected memory cells in the selected memory array block is smaller than a preset voltage; preset voltage is less than threshold voltage.
Description
Technical field [0001] The present invention relates to the field of semiconductor technologies, and more particularly to a control method, apparatus, and storage medium of a three-dimensional memory. Background technique [0002] 3D phase change memory (phase change memory can be expressed as Phase Change Memory, English abbreviations can be expressed as PCM) is a storage technology using a sulfur compound as a storage medium, using a material in different states of resistance to store data. The three-dimensional phase change memory has the advantage of bit-bit addresses, the data is not lost, the storage density is high, and the read / write speed is considered to be the most promising next-generation memory. [0003] However, there are various challenges in the three-dimensional phase change memory technology, for example, when a selected memory cell is read or written, the memory cell surrounding the memory cell surrounding the selected memory cell is interference. Inventive...
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IPC IPC(8): G11C13/00
CPCG11C13/0004G11C13/004G11C13/0069G11C2013/0071
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD