Unlock instant, AI-driven research and patent intelligence for your innovation.

A MOS gate-controlled thyristor with parasitic diode and its manufacturing method

A parasitic diode and thyristor technology, applied in the field of MOS gate-controlled thyristor and its manufacturing, can solve problems such as device failure and pulse system failure, and achieve the effect of avoiding failure.

Active Publication Date: 2022-05-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to avoid the failure of the pulse system caused by the breakdown of the gate dielectric when the MOS control thyristor is applied in the field of pulse power, and the failure of the device due to the breakdown of the gate dielectric during electrostatic discharge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A MOS gate-controlled thyristor with parasitic diode and its manufacturing method
  • A MOS gate-controlled thyristor with parasitic diode and its manufacturing method
  • A MOS gate-controlled thyristor with parasitic diode and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0038] figure 1 is a schematic structural diagram of an MCT, which has a parasitic thyristor structure, which has a large di / dt when it is turned on, and a small conduction voltage drop when it is turned on. However, when applied to pulse discharge, due to its large di / dt, a large induced electromotive force will be generated on the parasitic inductance from the cathode of the device to the ground, and the potential difference between the two ends of the gate capacitor will increase to exceed the gate oxide Layer breakdown voltage (V OX ) will result in breakdown of the gate oxide layer, thereby rendering the pulsed system ineffective.

[0039] figure 2 It is a schematic structural diagram of a MOS gate-controlled thyristor with a parasitic diode in an embodiment. Compared with the conventional MCT, the cathode metal 8 in the structure of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of power semiconductors, in particular to a MOS gate-controlled thyristor with a parasitic diode and a manufacturing method thereof suitable for the field of pulse power. The present invention mainly improves the device structure of the conventional MOS gate-controlled thyristor and introduces a parasitic diode between the gate and the cathode, thereby avoiding the failure of the pulse system caused by gate dielectric breakdown when the MOS gate-controlled thyristor is used in the field of pulse power, and the static electricity The problem of device failure due to gate dielectric breakdown during discharge.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to a MOS gate-controlled thyristor with a parasitic diode and a manufacturing method thereof suitable for the field of pulse power. Background technique [0002] In the pulse power system, the energy storage system and the power semiconductor switch are often used to compress the energy in the time width to generate transient high-power pulses. For the current pulse, it is generally required to have a larger rising edge di / dt and peak current. As the key device in the power pulse system, the power semiconductor switch determines the output power of the system, so it also puts forward corresponding requirements for its peak current and di / dt capability. [0003] Conventional MOS-Control Thyristors (MCTs) have the characteristics of high current density, fast switching speed, and small conduction voltage drop, which are very suitable for application in the field of power...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/749H01L29/74H01L21/332
CPCH01L29/7412H01L29/749H01L29/66371
Inventor 陈万军张舒逸刘超张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA