Gate structure with additional oxide layer and method for manufacturing the same

Abstract

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The gate structure includes agate dielectric layer formed over the substrate and a capping layer formed over the gate dielectric layer. The gate structure further includes a capping oxide layer formed over the capping layer anda work function metal layer formed over the capping oxide layer. The gate structure further includes a gate electrode layer formed over the work function metal layer.

Description

[0001] This application is a divisional application titled "Gate Structure with Additional Oxide Layer and Manufacturing Method Thereof" filed on November 17, 2015, with application number 201510788201.7. technical field [0002] The present invention generally relates to the field of semiconductors, and more particularly, to a gate structure and a manufacturing method thereof. Background technique [0003] Semiconductor devices are used in various electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing layers of insulating or dielectric material, conductive material, and semiconducting material over a semiconductor substrate, and patterning the individual material layers using photolithography to form circuit components and elements thereon. [0004] However, while existing semiconductor fabrication processes are generally adequate for their i...

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Problems solved by technology

[0004] However, while existing semiconductor fabrication processes are often adequate for their intended purposes, they cannot be fully satisfactory in all respects as devices continue to be scaled down

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