Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for recovering metal indium and metal tin from ITO waste targets

A technology of metal indium and waste targets, which is applied to the improvement of process efficiency, instruments, optics, etc., and can solve the problems of incomplete recovery of indium and tin

Active Publication Date: 2021-04-09
株洲火炬安泰新材料有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a method for recovering metal indium tin from waste ITO targets, which has the advantages of recovering indium and tin separately in two reactors, recovering tin first, and then recovering indium, reducing waste of resources, and solving the problem of indium and tin The recovery of tin is carried out in one reactor, and the recovery conditions of indium and tin are different. The recovery of indium and tin in the same reactor will lead to incomplete recovery of indium and tin, and the problem of residual indium and tin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recovering metal indium and metal tin from ITO waste targets

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] see figure 1 , an embodiment provided by the present invention: a method for recycling metal indium tin from a waste ITO target, the process of removing tin:

[0036] The temperature of the tin removal reactor is controlled at 323K, that is, between 49-50°C; the tin removal reactor is added with H with an acidity of 100g / L 2 SO 4 solution, H 2 SO 4 The solution submerges the ITO waste target by 6-8cm; the reaction time of the ITO waste target in the tin removal reactor is 20min.

[0037] The tin removal rate in the tin removal process can reach 100%, and the loss rate of indium in the slag is only 0.47-0.5%.

Embodiment 2

[0039] see figure 1 , an embodiment provided by the present invention: a method for recovering metal indium tin from a waste ITO target, the process of removing indium:

[0040]The temperature of the indium removal reactor is controlled at 363K, that is, between 89-90°C; the indium removal reactor is added with H with an acidity of 100g / L 2 SO 4 solution, H 2 SO 4 The solution submerges 6-8cm of the ITO waste target after tin removal; the reaction time of the ITO waste target after tin removal in the indium removal reactor is 120min.

[0041] In the indium removal process, the leaching rate of indium contained in the ITO waste target after tin removal is 99.5-99.9%.

Embodiment 3

[0043] An embodiment provided by the present invention: a method for recycling metal indium tin from a waste ITO target,

[0044] Steps:

[0045] S1. Wash the recovered ITO waste target with water first, soak the ITO waste target in a pure water pool for 2-3 minutes, then rinse the soaked ITO waste target in flowing pure water for 4-5 minutes, wash and dry;

[0046] S2. Add the ITO waste target after washing into the tin removal reactor, and add H with an acidity of 100g / L into the tin removal reactor. 2 SO 4 solution, H 2 SO 4 The solution is submerged in the ITO waste target for 6-8cm, and the tin removal reactor is heated to 323K by the heating device, and the temperature is controlled at 323K;

[0047] S3, react in the tin removal reactor for 20 minutes, the tin is leached out, and the tin solution is discharged;

[0048] S4, adding tin solution in the sedimentation tank, and adding H in the sedimentation tank 2 S solution, H 2 The ratio of S solution to tin solutio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for recovering metal indium and metal tin from ITO (indium tin oxide) waste targets. According to the method, a tin removal process is conducted on the ITO waste targets first of all, the indium removal process is conducted on the ITO waste targets, and the tin removal process and the indium removal process are sequentially and separately carried out. In the processes of removing the tin and the indium from the ITO waste targets, a tin removal reaction kettle and an indium removal reaction kettle are utilized, the tin removal rate in the tin removal process can reach 100%, and the loss rate of indium in residues is only 0.47-0.5%; in the indium removal process, the leaching rate of the indium contained in the ITO waste targets existing after tin removal is 99.5-99.9%; the tin removal reaction kettle and the indium removal reaction kettle are each provided with a heating device and a temperature control device; and the ITO waste targets are subjected to water washing operation before the tin removal process and are subjected to water washing operation before the indium removal process. The method for recovering the metal indium and the metal tin from the ITO waste targets has the advantages that indium recovery and tin recovery are separately carried out in the two reaction kettles, tin is recovered firstly, then indium is recovered, and resource waste is reduced.

Description

technical field [0001] The invention relates to the technical field of recycling ITO waste targets, in particular to a method for recycling metal indium tin from ITO waste targets. Background technique [0002] ITO is called indium tin oxide, which is an indium (group III) oxide (In 2 o 3 ) and tin (Group IV) oxides (SnO 2 ) mixture, usually with a mass ratio of 90% In 2 o 3 , 10% SnO 2 . It is transparent and slightly brown in film form. In the block state, it is yellowish-gray. [0003] ITO is mainly used in the production of liquid crystal displays, flat panel displays, plasma displays, touch screens, electronic paper, organic light-emitting diodes, and solar cells, and antistatic coatings and transparent conductive coatings for EMI shielding. [0004] ITO is also used in various optical coatings, most notably mid-infrared-reflective coatings (hot mirrors) in architecture, automobiles, and glass for sodium vapor lamps. Other applications include gas sensors, anti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C22B25/06C22B58/00C25C1/22C25C3/34
CPCC22B7/007C22B7/006C22B25/06C22B25/04C22B58/00C25C1/22C25C3/34Y02P10/20
Inventor 唐安泰
Owner 株洲火炬安泰新材料有限公司