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Structural design of power module and implementation method thereof

A power module and power chip technology, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve problems such as uneven current of parallel chips

Pending Publication Date: 2021-04-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The power module solution has become the only way to increase the power of silicon carbide devices. High power means that there are more chips connected in parallel in the module. If the gate-source paths of these parallel chips are greatly different from each other, then Silicon carbide power modules in high-speed switching and high-frequency applications are prone to uneven current problems during switching transients.

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  • Structural design of power module and implementation method thereof
  • Structural design of power module and implementation method thereof
  • Structural design of power module and implementation method thereof

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Embodiment Construction

[0017] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the embodiments described here are only for illustration, not for limiting the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by one of ordinary skill in the art that these specific details are not required to practice the present invention. Additionally, in some embodiments, well-known circuits, materials or methods have not been described in detail in order not to obscure the present invention.

[0018] Throughout this specification, reference to "one embodiment," "an embodiment," "an example," or "example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in the present invention. In at least one em...

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Abstract

The invention discloses a structural design of a power module, and particularly relates to a layout scheme and a structural design of a gate-source path in the power module. The gate-source path of an upper bridge is ''I''-shaped, is parallel to the short axis center line of the power module and is arranged next to a signal terminal, and the gate-source paths of the lower bridge are ''T''-shaped and are symmetrically distributed on two sides of the long axis center line of the power module so that the dynamic current sharing characteristic of the power module in a switching transient state is improved by the proposed layout scheme and structural design of the gate-source paths.

Description

technical field [0001] The invention relates to a power module, in particular to a structural design and a realization method of a silicon carbide power module used in high-speed switching and high-frequency fields. Background technique [0002] High-power, high-frequency, and high-speed switching is the mainstream development trend of silicon carbide devices. Making full use of the performance advantages of high-speed switching and high-frequency operation of silicon carbide high-power devices is becoming the core advantage of silicon carbide devices to expand their market share. The power module solution has become the only way to increase the power of silicon carbide devices. High power means that there are more chips connected in parallel in the module. If the gate-source paths of these parallel chips are greatly different from each other, then In high-speed switching and high-frequency applications of silicon carbide power modules, parallel chips are prone to uneven cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/14H01L23/367H01L23/48
Inventor 郭清张茂盛任娜盛况
Owner ZHEJIANG UNIV