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Magnetic tunnel junction structure with symmetrical structure, and magnetic random access memory

A technology of magnetic tunnel junction and symmetric structure, applied in the field of memory, can solve the problems of reducing and increasing the error rate of memory read operation, and achieve the effect of reducing critical current, benefiting read/write performance, and improving thermal stability

Pending Publication Date: 2021-04-30
SHANGHAI CIYU INFORMATION TECH
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  • Claims
  • Application Information

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Problems solved by technology

In order to improve the thermal stability factor of ultra-small MRAM unit devices, the effective perpendicular anisotropy energy can be increased by reducing the thickness of the free layer, adding or changing the free layer to a material with low saturation magnetic susceptibility, etc. Density, thereby maintaining a high thermal stability factor, but the tunnel magnetoresistance ratio (Tunnel Magnetoresistance Ratio, TMR) of the magnetic tunnel junction will be reduced, which will increase the error rate of the memory read operation

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  • Magnetic tunnel junction structure with symmetrical structure, and magnetic random access memory
  • Magnetic tunnel junction structure with symmetrical structure, and magnetic random access memory
  • Magnetic tunnel junction structure with symmetrical structure, and magnetic random access memory

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Embodiment Construction

[0035] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0036] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0037] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic tunnel junction structure with a symmetrical structure, and a magnetic random access memory. The magnetic tunnel junction structure comprises a double-layer design of a free layer, double barrier layers arranged on the upper side and the lower side of the free layer in a combined mode and the extending symmetrical structure. Through the symmetrical structure design and the double-free-layer design, the thermal stability is improved, through the double-barrier-layer design, the stable and sufficient tunneling magnetoresistance rate is kept while the total resistance area product is not increased, the critical current can be effectively reduced, and improvement of the reading / writing performance of an MRAM circuit and manufacturing of an ultra-small MRAM circuit are quite facilitated.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic tunnel junction structure and a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H10N50/10
CPCH10B61/00H10N50/10
Inventor 张云森郭一民陈峻麻榆阳肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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