MRAM-NAND controller and data writing method thereof

Abstract

The invention provides an MRAM-NAND controller and a data writing method thereof. The controller comprises an embedded MRAM (Magnetic Random Access Memory), a host interface adopting a DDR-DRAM (Double Data Rate-Dynamic Random Access Memory) interface standard, an NAND controller, a microcontroller, a read buffer and a write buffer built in the embedded MRAM. Through the read / write separation design of the cache, the read / write speed of the data is improved, the use mode of the MRAM is optimized under the condition that the write-in times of the MRAM are limited, and the service life of the MRAM is prolonged; furthermore, the host interface of the MRAM-NAND controller adopts a DDR-DRAM (Double Data Rate-Dynamic Random Access Memory) interface, so the read-write speed of the controller and the memory bank applied by the controller can be improved. Through the cache separation design, read / write operation efficiency of the controller chip can be effectively improved, balanced and stabilized, meanwhile, the working time sequence is adjusted to deal with a compatibility problem of the existing host chip, and applicability of related products is improved.

Description

technical field [0001] This application relates to the field of memory technology, in particular to an MRAM-NAND controller and a data writing method thereof. Background technique [0002] Solid State Drives (SSD), referred to as solid disks, are hard disks made of solid-state electronic storage chip arrays, consisting of a control unit and a storage unit (FLASH chip, DRAM chip). The specifications and definitions of interfaces, functions and usage methods of solid-state hard disks are exactly the same as those of ordinary hard disks, and the shape and size of the products are also completely consistent with ordinary hard disks. It is widely used in military, vehicle, industrial control, video surveillance, network monitoring, network terminals, electric power, medical, aviation, navigation equipment and other fields. [0003] Although the development of NAND flash memory technology has promoted the SSD industry, due to the strict requirements on size, it is difficult for e...

AI Technical Summary

Problems solved by technology

[0005]However, the number of read and write times of existing MRAM cannot be infinite, generally between 1 million and 100 million times

It is several orders of magnitude higher than flash memory, but as a flash memory cache, it needs to withstand a high number of erases and writes, resulting in limited applicability and affecting product promotion

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