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Flash memory and manufacturing method thereof

A technology of flash memory and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem of high power consumption of split-gate flash memory, and achieve the effect of improving erasing efficiency and enhancing local electric field

Pending Publication Date: 2021-05-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a flash memory and its manufacturing method, to solve the problem of high power consumption when erasing the existing split-gate flash memory

Method used

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  • Flash memory and manufacturing method thereof
  • Flash memory and manufacturing method thereof
  • Flash memory and manufacturing method thereof

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Embodiment Construction

[0054] A flash memory and its manufacturing method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0055] figure 1 It is a flowchart of a method for manufacturing a flash memory in an embodiment of the present invention; Figure 2 to Figure 10 It is a structural schematic diagram of the semiconductor manufacturing method in an embodiment of the present invention during...

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Abstract

The invention provides a flash memory and a manufacturing method thereof. The manufacturing method is characterized in that an isolation structure which extends towards an initial floating gate layer and covers part of the upper surface of the initial floating gate layer is formed in the initial floating gate layer, so that when part of the initial floating gate layer is etched to form a floating gate layer, the part, covered by the isolation structure, of the initial floating gate layer is not etched, and therefore, at least the part, covered by the isolation structure, in the floating gate layer forms a floating gate tip. When the floating gate tip formed by adopting the manufacturing method of the flash memory is used for carrying out electronic erasing operation, a local electric field can be enhanced, and the erasing efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flash memory and a manufacturing method thereof. Background technique [0002] Flash memory is an important device in integrated circuit products. The main feature of flash memory is that it can keep stored information for a long time without applying voltage. Flash memory has the advantages of high integration, fast access speed and easy erasing, so it is widely used. [0003] Currently, there are two types of flash memory: stack gate flash memory and split gate flash memory. The stacked gate flash memory has a floating gate and a control gate located above the floating gate, and the control gates in the same column are connected to serve as word lines. However, the current stacked gate flash memory has the problem of over-erasing. Different from the stacked gate flash memory, the split gate flash memory forms a word line as an erasing gate on one side of the floatin...

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Application Information

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IPC IPC(8): H01L21/8246H01L21/762H01L27/11517H01L21/28
CPCH01L29/66825H01L21/76224H01L21/28008H10B41/00
Inventor 于涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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