Variable resistance memory and manufacturing method thereof

Abstract

The invention provides a variable resistance memory and a manufacturing method thereof. The variable resistance memory comprises a lower electrode, a metal oxide layer and a plurality of upper electrodes, wherein the metal oxide layer is formed on the lower electrode, the metal oxide layer comprises a plurality of conductive wire areas, each conductive wire area is provided with a bottom and a top, the width of the bottom is greater than that of the top, each conductive wire area comprises an oxygen vacancy, and the region, except the conductive wire region, in the metal oxide layer is a nitrogen-containing region; and the plurality of upper electrodes are formed on the metal oxide layer and respectively correspond to the conductive wire areas.

Description

technical field [0001] The invention relates to a variable resistance memory, in particular to a variable resistance memory capable of enhancing local electric field. Background technique [0002] Resistive random access memories (RRAM) have the advantages of fast instruction cycle and low power consumption, and are ideal for the next generation of non-volatile memory. The variable resistance memory is provided with a transition metal oxide (transition metal oxide, TMO) layer between two metal electrodes, which controls the state of the conductive filament in the transition metal oxide layer to be in the high resistance state (HRS) and low Electrically switch between resistance states (LRS). [0003] However, during the operation of the variable resistive memory, since the conductive thread is quite sensitive to the surrounding environment, it is difficult to control the formation and breakage of the conductive thread, which reduces the reliability of the variable resistive...

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Problems solved by technology

[0003] However, during the operation of the variable resistive memory, since the conductive thread is quite sensitive to the surrounding environment, it is difficult to control the formation and breakage of the conductive thread, which reduces the reliability of the variable resistive memory, such as the ability to read and write repeatedly. (endurance) and memory retention (retention)

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