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Semiconductor device structure

A device structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve all problems such as incomplete satisfaction

Inactive Publication Date: 2021-05-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] While existing semiconductor devices are generally adequate for their intended purpose, they are not completely satisfactory in all respects

Method used

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  • Semiconductor device structure
  • Semiconductor device structure
  • Semiconductor device structure

Examples

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Embodiment Construction

[0068]The following disclosure provides many different embodiments or examples for implementing different features of the present disclosure. However, the following disclosure describes specific examples of each component and its arrangement in order to simplify the disclosure. Of course, these are just examples and are not intended to limit the present disclosure. For example, if the following disclosure states that a first feature is formed on or over a second feature, it means that the formed first feature and the second feature are directly The embodiment of contact also includes the implementation that an additional feature can be formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. example. Additionally, the disclosure may repeat reference numerals and / or words in various examples. Repetition is for simplicity and clarity, and does not self-specify the relationship between the various e...

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Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure formed over a substrate. The semiconductor device structure includes a first gate structure formed over the first fin structure, and the first gate structure includes a first portion of a gate dielectric layer and a first portion of a filling layer. The semiconductor device structure also includes a second gate structure formed over the second fin structure, and a first isolation sealing layer between the first gate structure and the second gate structure. The first isolation sealing layer is in direct contact with the first portion of the gate dielectric layer and the first portion of the filling layer.

Description

technical field [0001] Embodiments of the present disclosure relate to a semiconductor technology, and in particular to a semiconductor device structure and a manufacturing method thereof. Background technique [0002] Semiconductor devices are used in various electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic equipment. Semiconductor devices are generally fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers on a semiconductor substrate, and patterning each material layer using photolithography to form circuit components and elements thereon. Many integrated circuits are typically fabricated on a single semiconductor wafer, and the individual dice on the wafer are singulated by dicing between the integrated circuits along dicing streets. The individual dies are typically individually packaged in multi-die modules or other types of packaging. [0003] As the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L21/8234
CPCH01L21/823412H01L21/823431H01L21/823481H01L27/0886
Inventor 林毓超云惟胜李东颖
Owner TAIWAN SEMICON MFG CO LTD