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Bidirectional conduction high-voltage high-performance programmable semiconductor anti-surge protection device

A bidirectional conduction and device protection technology, applied to semiconductor devices, electric solid state devices, transistors, etc., can solve problems such as system malfunction, damage, and overall system performance degradation

Pending Publication Date: 2021-05-18
JIANGSU YOURUN MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Frequent unexpected voltage transients and surge currents degrade the performance of the whole system, causing system malfunction or even damage

Method used

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  • Bidirectional conduction high-voltage high-performance programmable semiconductor anti-surge protection device
  • Bidirectional conduction high-voltage high-performance programmable semiconductor anti-surge protection device

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Embodiment Construction

[0012] Such as Figure 1-2 A high-voltage high-performance programmable semiconductor anti-surge protection device with bidirectional conduction shown includes a chip 1 arranged on a base island 2, the chip 1 is connected to the outer frame 3 of the base island 2 through a bonding wire 4, and the chip 1 Including thyristors 11, triodes 12 and diodes 13 arranged in pairs, thyristors 11, triodes 12, and diodes 13 are all provided with a pair, and are symmetrically arranged on the substrate, and the two triodes 12 are connected together and located in the middle of the substrate. The thyristor 11 and the two diodes 13 are arranged symmetrically on both sides of the two triodes 12, the thyristor 11 adopts evenly distributed cathode short-circuit point 11a, and the gate 11b hole is opened at P + In the region, the cathode short-circuit point 11a is a number of circular platforms reserved after photolithography, the gate 11b of the thyristor 11 is connected to the emitter 12a of the...

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Abstract

The invention discloses a bidirectional conduction high-voltage high-performance programmable semiconductor anti-surge protection device which comprises a chip arranged on a base island, the chip is connected with an outer frame of the base island through a bonding wire, and the bidirectional conduction high-voltage high-performance programmable semiconductor anti-surge protection device is characterized in that the chip comprises a pair of thyristors, a pair of triodes and a pair of diodes which are arranged in pairs. One pair of thyristors, one pair of triodes and one pair of diodes are arranged, and are symmetrically arranged on the substrate. The two triodes are connected together and located in the middle of the substrate, the two thyristors and the two diodes are symmetrically arranged on the two sides of the two triodes, cathode short-circuit points are evenly distributed in the thyristors, gate pole holes are formed in a P + region, gate poles of the thyristors are connected with emitting electrodes of the triodes through aluminum leads. According to the device, the cathode short-circuit points are uniformly distributed on the thyristor, and the gate pole hole is formed in the P+ region, so that the anti-surge capability is enhanced, the reverse breakdown voltage is improved, and the performance of a device is enhanced.

Description

technical field [0001] The invention relates to an anti-surge protection device, in particular to a semiconductor anti-surge protection device. Background technique [0002] With the rapid development of communication technology and the acceleration of information transmission speed, the requirements for the stability of the communication system are getting higher and higher. Frequent unexpected voltage transients and surge currents degrade the performance of the whole system, causing system malfunction or even damage. Therefore, in order to improve the reliability of the system, protection measures must be taken against voltage transients and surges, so the performance of protection devices becomes very important. The device in this project is a two-way conduction programmable semiconductor anti-surge protection device. It is widely used in the anti-surge protection of communication equipment due to its fast response speed, small size, stable performance, short-circuit pro...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0259H01L27/0296
Inventor 石华平黎威志陈婷婷黄江陈德林范荣荣
Owner JIANGSU YOURUN MICROELECTRONICS CO LTD
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