Nitrogen protection cleaning method for nanometer wafer product

Abstract

The invention discloses a nitrogen protection cleaning method for a nanometer wafer product. The method comprises the following steps of, 1, a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen spray nozzle are moved to a position right above a wafer, and the distance between the atomization cleaning spray head and the wafer is adjusted to be 14-30mm; 2, a wafer bearing mechanism drives the wafer to rotate, an external gas source of a nitrogen nozzle supplies gas, nitrogen is blown to the surface of the wafer, the liquid cleaning spray head and the atomization cleaning spray head are started in sequence, cleaning liquid is sprayed to the surface of the wafer, and the surface of the wafer is cleaned; and 3, after cleaning is finished, the atomization cleaning spray head, the liquid cleaning spray head and the nitrogen spray nozzle are sequentially closed and then moved away from the position right above the wafer. According to the method, the nitrogen is adopted for blowing, a gas protection film is formed on the surface of vaporific water, the surface energy of liquid is kept, droplet molecules are prevented from being agglomerated, and the cleaning effect of the nanowafers is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor cleaning equipment, and in particular relates to a nitrogen protection cleaning method for nano-wafer products. Background technique [0002] In the field of semiconductor cleaning, for high-end wafer products, such as related wafer products involving logic integrated circuits, storage, power devices and other products, in the process of manufacturing, through various complex photolithography, wet, deposition, Oxidation and other related processes are processed. However, after each process is completed, it needs to be processed by a cleaning process to ensure the accuracy and reproducibility of subsequent processes. [0003] Especially for the wafer cleaning wet process required by 65-14nm pitch, and the wafer products whose size is below 14nm and extended to 5nm pitch, under the effect of size effect, the core problem of wafer wet process is that the liquid remains in the nanometer in the ...

AI Technical Summary

Problems solved by technology

Storage products such as DRAM NAND and other related structures have different metallization microstructures and high aspect ratio pattern distribution. If the general cleaning method is used, the surface of the nanowafer cannot be cleaned well due to the accumulation of liquid particles. Cleaning is a problem that needs to be solved urgently

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