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Method for collective production of plurality of semiconductor structures

A manufacturing method, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as difficulty in forming thickness, and achieve the effect of high manufacturing output

Pending Publication Date: 2021-05-28
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, when the size of the islands is small, such as when the islands are inscribed in a circle with a diameter between 0.1 μm and 5 μm, it is difficult to form a layer with a very controllable thickness.

Method used

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  • Method for collective production of plurality of semiconductor structures
  • Method for collective production of plurality of semiconductor structures
  • Method for collective production of plurality of semiconductor structures

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Embodiment Construction

[0026] The present invention aims to co-fabricate multiple small-scale semiconductor structures. In this patent application, a "semiconductor structure" refers to any semiconductor device that can be individually controlled or utilized and that includes a stack of semiconductor layers defining an active layer, ie a layer having optoelectronic properties. For example, it could be a matter of light emitting diodes, laser diodes, photovoltaic cells or any other optoelectronic device. In addition to the stack of semiconductor layers forming the active layer, the functional device may comprise other elements, such as carriers, contact pads or conductive vias or microlenses, enabling it to actually function.

[0027] It is not necessary to distinguish each semiconductor structure from the other structures at the end of or during the co-fabrication process to fabricate completely independent devices. A set of structures can be kept connected to each other so as to reside in a single...

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Abstract

The invention relates to a method for the collective production of a plurality of semiconductor structures (8). It comprises providing a substrate formed by a support (2) having a main face, a dielectric layer (3) disposed on the main face of the support (2) and a plurality of crystalline semiconductor growth islands (4) disposed on the dielectric layer (3). It also comprises forming at least one crystalline semiconductor active layer (6) on the growth islands. According to the invention, the method comprises, after the step of forming the active layer (6), the forming of trenches (7) in the active layer (6) and in the growth islands (4) in order to define the plurality of semiconductor structures (8).

Description

technical field [0001] The invention relates to a method for the joint production of a plurality of semiconductor structures. Background technique [0002] A method for co-manufacturing a plurality of semiconductor structures is known, for example, from document FR2992465. In this document a substrate is provided which is formed by a carrier, by a dielectric layer on the main surface of the carrier and at least partially relaxed growth islands made of InGaN. Next, a stack of semiconductor layers is formed on the growth islands to produce light emitting diodes (LEDs). The stack includes an n-type contact layer, an active layer and a p-type contact layer. In the cited literature, the islands are square and have side lengths of 1 mm size. [0003] The relaxation of the growth islands formed of crystalline semiconductor material can be obtained during the preparatory process for manufacturing the substrate, for example as described in documents EP2151852 and EP2151856. Thus,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02488H01L21/02538H01L21/0254H01L21/02639H01L33/0093H01L21/2007H01L24/94H01L25/0655H01L25/50H01L2224/94
Inventor D·索塔
Owner SOITEC SA