Ultralow-temperature sintered microwave dielectric material Ca2V2O7-H3BO3 and preparation method thereof

A microwave dielectric material, H3BO3 technology, applied in sustainable manufacturing/processing, chemical industry, climate sustainability, etc., can solve the problem of insufficient microwave performance of materials

Active Publication Date: 2021-06-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to aim at existing microwave dielectric material Ca 2 V 2 o 7 In the preparation method, the sintering temperature is too high and the microwave performance of the prepared material is not good enough. To provide an ultra-low temperature sintered microwave diele

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  • Ultralow-temperature sintered microwave dielectric material Ca2V2O7-H3BO3 and preparation method thereof
  • Ultralow-temperature sintered microwave dielectric material Ca2V2O7-H3BO3 and preparation method thereof

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Embodiment Construction

[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0025] The present invention provides 6 embodiments altogether, and the ultra-low temperature sintered microwave dielectric material Ca of each embodiment 2 V 2 o 7 -H 3 BO 3 in, H 3 BO 3 compared to Ca 2 V 2 o 7 The mass percentage is x; the value of x, the core process parameters in the preparation method and the microwave dielectric properties of the prepared material are shown in the following table:

[0026] Numbering composition Sintering temperature Sintering time ε r

Q×f(GHz) τ f (ppm / °C)

Example 1 x＝1 850 3 10.15 43348 -113.84 Example 2 x＝3 725 3 10.93 36893 -115.36 Example 3 x＝3 660 3 7.35 18749 -113.23 Example 4 x＝5 725 3 11.11 37461 -115.97 Example 5 x＝7 725 3 10.53 34605 -111.07 Example 6 x＝9 725 3 10.36 37565 -106.56

[00...

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Abstract

The invention belongs to the field of electronic materials and manufacturing thereof, provides an ultralow-temperature sintered microwave dielectric material Ca2V2O7-H3BO and a preparation method thereof, and aims to solve the problems that the sintering temperature is too high and the microwave performance of the prepared material is not good enough in a conventional preparation method of the microwave dielectric material Ca2V2O7. According to the preparation method, a traditional solid phase method is adopted, H3BO3 is added into a pre-synthesized Ca2V2O7 base material to serve as a sintering aid, the sintering temperature is greatly reduced, and ultralow-temperature sintering at 660 DEG C is achieved; meanwhile, the sintering aid greatly promotes densification of a sample without any chemical reaction with Ca2V2O7, so that the Q*f value of the microwave dielectric material is greatly increased while ultralow-temperature sintering is realized, the Q*f value of the material sintered at the temperature of 725-850 DEG C is 34605-43348 GHz, and the Q*f value of the material sintered at the ultralow temperature (660 DEG C) is 18749 GHz; in addition, the process is simple, industrial production is easy, ultralow-temperature sintering has the remarkable advantage of saving energy, and the method can be used for producing microwave components such as resonators and filters.

Description

technical field [0001] The invention belongs to the field of electronic materials and their manufacture, and specifically provides an ultra-low temperature sintered microwave dielectric material Ca 2 V 2 o 7 -H 3 BO 3 and its preparation method. Background technique [0002] Ultra-low temperature sintering of microwave dielectric materials is currently a research hotspot in microwave components, but the sintering temperature of microwave dielectric materials is generally high, and how to reduce the sintering temperature (not higher than 660°C) to achieve co-sintering with aluminum has become a research difficulty. Because of its inherently low sintering temperature and excellent microwave properties, vanadate has attracted extensive research by many domestic and foreign scholars. [0003] Mi-Ri Joung, Jin-Seong Kim and others in the literature "Formation Process and MicrowaveDielectric Properties of the R 2 V 2 o 7 (R=Ba, Sr, and Ca)Ceramics" prepared Ca at a sinteri...

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Application Information

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IPC IPC(8): C04B35/495C04B35/622C04B35/64
CPCC04B35/495C04B35/622C04B35/64C04B2235/3208C04B2235/3239C04B2235/3409Y02P20/10
Inventor 李波韩如意曹慧敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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