Phase change memory and preparation method thereof

Abstract

The embodiment of the invention discloses a phase change memory and a preparation method thereof. The phase change memory comprises: a plurality of phase change memory units which are arranged in parallel and are located on a substrate; and electrically insulated isolation structures are positioned between the adjacent phase change storage units and used for electrically isolating the adjacent phase change storage units, wherein each isolation structure is made of ceramic.

Description

technical field [0001] The present disclosure relates to the technical field of microelectronic devices, in particular to a phase-change memory and a preparation method thereof. Background technique [0002] Phase-change memory is a new type of non-volatile data storage device, which uses the difference in conductivity or optical properties of phase-change materials when they transform between crystalline and amorphous states to achieve data storage. The operation of the phase-change memory unit is accompanied by complex thermal processes, which will affect the stability of the phase-change memory. Contents of the invention [0003] In view of this, embodiments of the present disclosure provide a phase change memory and a manufacturing method thereof. [0004] According to a first aspect of an embodiment of the present disclosure, a phase change memory is provided, including: [0005] A plurality of phase-change memory cells arranged side by side are located on the subst...

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Problems solved by technology

[0002] Phase-change memory is a new type of non-volatile data storage device, which uses the difference in conductivity or optical properties of phase-change materials when they transform between crystalline and amorphous states to achieve data storage. The operation of the change memory unit is accompanied by complex thermal processes, which will affect the stability of the phase change memory

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