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A dielectric breakdown test circuit and test method thereof

A technology for dielectric breakdown and circuit testing, applied in the direction of testing dielectric strength, etc., can solve the problems of long testing time and low efficiency, and achieve the effect of improving efficiency

Active Publication Date: 2021-08-13
晶芯成(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And the current time-related dielectric breakdown needs to be tested under multiple voltages, different breakdown times, each voltage is tested separately and sequentially, the test time is long and the efficiency is low

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  • A dielectric breakdown test circuit and test method thereof
  • A dielectric breakdown test circuit and test method thereof
  • A dielectric breakdown test circuit and test method thereof

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Embodiment Construction

[0055] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0056] see figure 1 As shown, in the time-related dielectric breakdown test, the dielectric is monitored by setting a certain voltage on both sides of the dielectric, and the breakdown time of the dielectric is obtained. In specific operations, such as figure 1As shown, the dielectric is placed on the first test point P1, and the two ends of the first test point P1 are connected to the test pads, such as the first test pad S1 and the second test pad S2, and the fi...

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Abstract

The invention discloses a dielectric breakdown test circuit and a test method thereof. The dielectric breakdown test circuit includes at least two test circuits connected in series, and the test circuit includes: a resistor; a diode, the anode of which is electrically connected to the one end of the resistor; an electric fuse, one end of which is electrically connected to the negative pole of the diode; a test point, one end of which is electrically connected to the other end of the electric fuse, and the other end of the test point is electrically connected to the The other end of the resistance; wherein, one end of each test circuit is the connection point between the resistance and the test point, and the other end is the connection point between the diode and the electric fuse. Through the dielectric breakdown test circuit provided by the invention, the efficiency of obtaining characteristic life can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a dielectric breakdown test circuit and a test method thereof. Background technique [0002] Time-dependent dielectric breakdown (Time Dependent Dielectric Breakdown, TDDB) is an important mechanism of dielectric failure, which is to apply a constant voltage to the gate, so that the device is in an accumulation state. After a period of time, the dielectric breaks down, and the time elapsed during this period is the lifetime under that condition (voltage). [0003] The time-dependent dielectric breakdown life is related to the breakdown voltage applied to the gate. When the field strength lower than the intrinsic breakdown is applied to the gate, the smaller the applied voltage, the greater the breakdown time and the smaller the breakdown time. The voltage test can reach tens of thousands of seconds. Moreover, the current time-related dielectric breakdown needs to be test...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/12
CPCG01R31/12
Inventor 目晶晶田文星
Owner 晶芯成(北京)科技有限公司