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Soldering method of semiconductor device and semiconductor device

A welding method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device components, and semiconductor/solid-state device manufacturing, etc., can solve the problems such as the inability to discharge air bubbles smoothly, the high welding void rate, and the reduction of welding quality.

Active Publication Date: 2021-09-03
度亘核芯光电技术(苏州)有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a welding method for semiconductor devices and semiconductor devices, so as to alleviate the technical problems that the air bubbles cannot be smoothly discharged during the welding process of the existing semiconductor devices, the welding void rate is high, and the welding quality is reduced.

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  • Soldering method of semiconductor device and semiconductor device
  • Soldering method of semiconductor device and semiconductor device
  • Soldering method of semiconductor device and semiconductor device

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Embodiment Construction

[0035] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] Such as Figure 1 to Figure 7 As shown, the semiconductor device welding method provided in this embodiment specifically includes the following steps:

[0037] Provide groove structure: form a plurality of first grooves 11 extending along the first direction and arranged at intervals along the second direction on the surface of the first device 10, wherein, in the second direction, from the middle of the first device 10 to The widths of the plurality of first grooves 11 arranged in the direction of both sides gra...

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Abstract

The invention provides a semiconductor device welding method and a semiconductor device, which relate to the technical field of semiconductor device preparation, including setting a groove structure; a first groove; depositing solder; depositing a solder structure on the surface of the first device, forming a plurality of protrusions extending along the first direction and spaced apart along the second direction on the surface of the solder structure, wherein, in the second direction From the middle of the first device to both sides, the heights of the plurality of protrusions gradually decrease; welding the first device and the second device; placing the second device on the solder structure, heating the solder to connect the second device and the first device One device welding. During welding, the gaps between adjacent protrusions and between the top surface of the lower protrusion and the second device can be used as exhaust channels to discharge the gas during the welding process to the outside and reduce the risk of welding. Voids are generated in the final solder layer to reduce the void rate.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a semiconductor device welding method and the semiconductor device. Background technique [0002] In the technical field of semiconductor device preparation, it is often encountered that two devices are welded. The quality of the welding technology directly affects the product quality and packaging efficiency. In some welding, in order to improve production efficiency, one of the devices will be The surface is first provided with solder, and then another device is placed on top of this solder and soldered by heating. [0003] In the prior art, during the soldering process, the gas generated by the solder and the air between the devices are easy to form bubbles in the solder layer, and the contact area between the devices is relatively large, so that the generated bubbles cannot be discharged smoothly, resulting in solder voids If the rate is high, the we...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/488
CPCH01L21/4814H01L21/4821H01L23/488H01L2224/83385
Inventor 惠利省李靖赵卫东
Owner 度亘核芯光电技术(苏州)有限公司
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