A Gold Wire Interconnection Vertical Compensation Structure and Its Design Method in a Radio Frequency Microsystem
A technology of gold wire interconnection and vertical compensation, which is applied in waveguides, circuits, waveguide devices, etc., can solve the problem of occupying surface area, achieve the effects of reducing optimization time, improving optimization efficiency, and improving transmission characteristics
Active Publication Date: 2021-09-28
ANHUI UNIVERSITY
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Problems solved by technology
[0006] The purpose of the present invention is to solve the defect that the gold wire interconnection compensation structure needs to occupy the surface area in the prior art, and provide a gold wire interconnection vertical compensation structure and its design method in the radio frequency microsystem to solve the above problems
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[0042] In order to have a further understanding and understanding of the structural features of the present invention and the achieved effects, the preferred embodiments and accompanying drawings are used for a detailed description, as follows:
[0043] Such as figure 1 with figure 2 As shown, a vertical compensation structure of gold wire interconnection in a radio frequency microsystem includes a microwave multilayer dielectric substrate. The microwave multilayer dielectric substrate is formed by laminating a dielectric substrate A105 and a dielectric substrate B106. The upper surface and the lower surface of the dielectric substrate A105 Both are made of metal, and the upper and lower surfaces of the dielectric substrate B106 are made of metal. Here, the microwave multilayer dielectric substrate is suitable for different methods such as multi-layer low-temperature co-fired ceramic technology, multi-layer microwave printed circuit board technology, and multi-layer silicon-...
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Abstract
The invention relates to a gold wire interconnection vertical compensation structure in a radio frequency microsystem and a design method thereof, which solves the defect that the gold wire interconnection compensation structure needs to occupy a surface area compared with the prior art. The strip transmission line of the present invention is located directly below the surface microstrip transmission line, and the long side of the strip transmission line is perpendicular to the long side of the surface microstrip transmission line. The hole is located in the dielectric substrate B, the top of the metallized ground via hole is in contact with the strip transmission line, and the bottom of the metallized ground via hole is in contact with the lower surface of the dielectric substrate B. The invention effectively solves the design problem of parasitic inductance effect compensation of gold wire interconnection wires in miniaturized, multi-channel, high-density radio frequency microsystem packaging, improves the impedance matching and transmission characteristics of gold wire interconnection wires, and utilizes the multiple Layer structure, the characteristic impedance compensation design of mixed inductance and capacitance is carried out in the vertical direction.
Description
technical field [0001] The invention relates to the technical field of three-dimensional radio frequency microsystems, in particular to a gold wire interconnection vertical compensation structure and a design method thereof in radio frequency microsystems. Background technique [0002] As the frequency of next-generation radar, communication and other electronic systems is developing towards millimeter wave and terahertz frequency bands, the wavelength size is getting smaller and smaller, and the demand for system integration is getting stronger and stronger. Homogeneous integration developed along the path of Moore's Law can no longer meet the functional requirements of the system. RF microsystem technology is the key technology to break through this bottleneck. It uses three-dimensional space to integrate chips with different functions, such as RF, into heterogeneous and heterogeneous stacks. As the most advanced system integration technology at present, RF microsystem pa...
Claims
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IPC IPC(8): H01P3/08
CPCH01P3/08H01P3/081
Inventor 朱浩然鲁加国孙玉发吴先良吴博黄志祥
Owner ANHUI UNIVERSITY