A Highly Sensitive Humidity Detector

A humidity detector and sensitive technology, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of high cost and large size of humidity detection devices, and achieve high humidity detection sensitivity and small size. Effect

Active Publication Date: 2022-05-17
广东润宇传感器股份有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, optical fiber-based humidity detection devices are costly and bulky

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Highly Sensitive Humidity Detector
  • A Highly Sensitive Humidity Detector
  • A Highly Sensitive Humidity Detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The invention provides a highly sensitive humidity detector, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a free layer 4 , and a hygroscopic expansion material part 5 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The material of the barrier layer 3 is aluminum oxide or magnesium oxide. The free layer 4 is placed on the barrier layer 3 . The barrier layer 3 separates the pinned layer 2 and the free layer 4 . The material of the free layer 4 is soft magnetic material with weak magn...

Embodiment 2

[0025] On the basis of Example 1, such as figure 1 As shown, the hygroscopic swelling material portion 5 is in contact with the free layer 4 . In this way, when the hygroscopic expansion material part 5 expands, it will also squeeze the free layer 4, thereby changing the stress in the free layer 4, thereby changing the spin state of the free layer 4, thereby changing the magnetoresistance of the magnetic tunnel junction. Therefore, this embodiment can realize humidity detection with higher sensitivity.

Embodiment 3

[0027] On the basis of Example 2, such as figure 2 As shown, in adjacent holes, the heights of the hygroscopic expansion material parts 5 are different. In this way, the compressive forces exerted by the hygroscopic expansion material parts 5 in adjacent holes on the free layer 4 are different, thereby causing the effect of twisting stress on the free layer 4, thereby changing the spin in the free layer 4 more. state, thereby changing the magnetoresistance of the magnetic tunnel junction more, thereby achieving higher sensitivity humidity detection.

[0028] Furthermore, the holes are arranged non-periodically. That is, the distances between the holes are not equal. In this way, it is easier to cause inhomogeneous stress distribution inside the free layer 4, thereby changing the spin state of the free layer 4 more, thereby changing the magnetoresistance of the magnetic tunnel junction more, thereby achieving higher sensitivity to humidity probing.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of humidity detection, and specifically provides a high-sensitivity humidity detector, wherein a pinned layer is placed on an antiferromagnetic layer, a potential barrier layer is placed on a pinned layer, and a free layer is placed on a potential On the barrier layer, the potential barrier layer separates the pinned layer and the free layer, the free layer is provided with a penetrating hole, and the hygroscopic expansion material portion is placed on the potential barrier layer at the bottom of the hole. In the present invention, the pinned layer, the barrier layer, and the free layer constitute a magnetic tunnel junction. During application, the present invention is placed in the humidity environment to be measured; at the same time, a fixed magnetic field is applied to act on the present invention. The humidity of the environment to be measured is determined by measuring the difference between the magnetic resistance of the magnetic tunnel junction in the environment of humidity to be measured and the environment of humidity not to be measured. The invention has the advantage of high humidity detection sensitivity.

Description

technical field [0001] The invention relates to the field of humidity detection, in particular to a high-sensitivity humidity detector. Background technique [0002] Humidity detection involves all areas of production and life. Optical fiber based humidity detection has the advantage of high sensitivity. However, optical fiber-based humidity detection devices are costly and bulky. Exploring the humidity detection technology based on new principles is of great significance for improving the sensitivity of humidity detection and reducing the volume of humidity detection devices. Contents of the invention [0003] In order to solve the above problems, the present invention provides a highly sensitive humidity detector, comprising an antiferromagnetic layer, a pinning layer, a barrier layer, a free layer, and a hygroscopic expansion material part, and the material of the antiferromagnetic layer is a hard magnetic antiferromagnetic layer. Magnetic material, the pinning layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/72
CPCG01N27/72Y02P70/50
Inventor 不公告发明人
Owner 广东润宇传感器股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products