Resistive random-access memory device and manufacturing method thereof
A resistive storage and variable technology, applied in information storage, static storage, digital storage information, etc., can solve the problems of difficult manufacturing engineering, decreased yield, and increased manufacturing cost.
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[0061] The present invention provides a variable resistance memory including a stacked memory cell array (ie, a memory cell array having a three-dimensional structure). The variable resistance memory of the present invention not only has the function of randomly accessing memory cells, but also has the function of simultaneously accessing multiple memory cells. A memory cell formed in a three-dimensional structure includes an access transistor between a pair of bit lines, and variable resistance elements formed on both sides thereof. For the memory cells in the column direction, the bit line is shared between adjacent memory cells, and the memory cells are selected so that when the memory cells on one side are selected, the memory cells on the other side are unselected, preventing the selection of connection selection memory cells On the bit line, an undesired sneak path is formed.
[0062] In addition, the three-dimensional memory cell array of the present invention can be a...
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