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Semiconductor device

A semiconductor and drain technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as unsatisfactory

Pending Publication Date: 2021-07-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To sum up, although the existing interconnection technology is usually used for its development purpose, it cannot meet the needs of all aspects

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0055] The following detailed description can be accompanied by accompanying drawings to facilitate understanding of various aspects of the present invention. It is worth noting that various structures are used for illustration purposes only and are not drawn to scale, as is the norm in the industry. In fact, the dimensions of the various structures may be arbitrarily increased or decreased for clarity of illustration.

[0056] Different embodiments or examples provided in the following content can implement different structures of the embodiments of the present invention. The examples of specific components and arrangements are used to simplify the disclosure and not to limit the invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, various examples of the present invention may rep...

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PUM

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Abstract

The embodiment of the invention provides a semiconductor device. The semiconductor device includes a source structure and a drain structure on a substrate. The semiconductor device also includes a source via electrically coupled to the source structure; and a drain via electrically coupled to the drain structure. The source via has a first size, the drain via has a second size, and the first size is greater than the second size. The semiconductor device may also include a first metal line electrically coupled to the source via, and a second metal line electrically coupled to the drain via. A first size of the source via conforms to a size of the first metal line, and a second size of the drain via conforms to a size of the second metal line. The first metal circuit can be wider than the second metal circuit.

Description

technical field [0001] Embodiments of the present invention relate to an integrated circuit, a semiconductor device and a method for forming the same, in particular to a semiconductor device with reduced contact resistance. Background technique [0002] The integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation of integrated circuits. In the evolution of integrated circuits, functional density (eg, the number of interconnect devices per chip area) generally increases as geometric dimensions (eg, the smallest components or lines produced by the fabrication process employed) shrink. Downsizing is often beneficial in increasing capacity and reducing associated costs. [0003] Shrinking dimensions also increase the complexity of handling and manufacturing integrated circuits. In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L21/8234
CPCH01L27/0886H01L21/823431H01L21/823475H01L21/823418H01L27/0207H01L23/485H01L21/76897H01L23/5226H01L23/5283H01L21/76834H01L21/76816H01L29/0847H01L29/41791H01L29/7848
Inventor 蔡国强陈羿如陈志辉
Owner TAIWAN SEMICON MFG CO LTD