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Three-dimensional memory and its manufacturing process

A manufacturing process and memory technology, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problem of high floating gate roll-off ratio, and achieve the effect of reducing roll-off ratio and voltage, and reducing parasitic capacitance

Active Publication Date: 2022-04-01
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The main purpose of the present invention is to provide a three-dimensional memory and its manufacturing process to solve the problem of high roll-off ratio of the floating gate in the three-dimensional memory in the prior art

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  • Three-dimensional memory and its manufacturing process
  • Three-dimensional memory and its manufacturing process

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Embodiment Construction

[0047] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0048] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0049] It should be noted that the terms "fir...

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Abstract

The invention provides a three-dimensional memory and its manufacturing process. The three-dimensional memory includes a substrate, a storage structure, and a stacked gate structure. The stacked gate structure is arranged on the substrate, and the stacked gate structure is vertically arranged through the stacked gate structure. The stacked gate structure includes alternately stacked gate layers and gate layers. The insulating layer has a plurality of air gaps in the gate insulating layer, and a high-K dielectric layer is arranged at the position corresponding to the storage structure and the gate layer. There are a plurality of air gaps in the gate insulating layer, and the dielectric constant of the gate insulating layer 222 with air gaps is lower than that of conventional gate insulating layers in the prior art, therefore, the parasitic capacitance can be reduced, thereby reducing the floating gate. roll-off ratio and voltage.

Description

technical field [0001] The present invention relates to the technical field of three-dimensional memory, in particular, to a three-dimensional memory and a manufacturing process thereof. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. , so it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NOR Flash Memory, NAND Flash Memory can provide high cell density, high storage density, and faster writing and erasing speed. [0003] However, the current development of planar flash memory has encountered various challenges: physical limits, such as exposure technology limits, development technology limits, and storage elec...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11519H01L27/11524H01L27/11556H01L27/11565H01L27/1157H01L27/11582
CPCH10B41/10H10B41/35H10B41/27H10B43/35H10B43/10H10B43/27
Inventor 高庭庭薛磊刘小欣耿万波
Owner YANGTZE MEMORY TECH CO LTD