Multiferroic heterojunction magnetic sensor and preparation method thereof and electronic equipment
A multi-ferrous heterojunction and magnetic sensor technology, applied in the sensor field, can solve the problems of narrow signal frequency range, high sensor cost, unsuitable for wide commercial applications, etc., and achieve the effect of reducing the size of the device
Pending Publication Date: 2021-08-10
NORTHWESTERN POLYTECHNICAL UNIV
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[0004] The existing mature high-sensitivity electronic devices are mainly superconducting quantum interferometers, which are expensive and bulky, and are not suitable for widesp
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[0034] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0035] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present.
[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as...
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Abstract
The invention relates to a multiferroic heterojunction magnetic sensor and a preparation method thereof, and electronic equipment. The magnetic sensor comprises a substrate with a back cavity, and a piezoelectric diaphragm and a magnetostrictive layer which are fixedly arranged on the surface of the substrate, wherein the magnetostrictive layer is accommodated in the back cavity, the piezoelectric diaphragm is arranged on one side, away from the back cavity, of the substrate, the substrate comprises two parts which are arranged at an interval to define a back cavity, one part of the substrate comprises a supporting part and a cantilever beam, one end of the cantilever beam is fixedly arranged on the supporting part, the other end of the cantilever beam is suspended on the back cavity, the piezoelectric vibrating diaphragm and the magnetostriction layer are fixedly arranged on the cantilever beam, and the piezoelectric diaphragm comprises electrode layers arranged on the substrate and a piezoelectric layer clamped between the electrode layers. Through the mode, the magnetostriction effect and the delta E effect of the magnetostriction layer and the positive piezoelectric effect and the inverse piezoelectric effect of the piezoelectric structure are used, one multiferroic heterojunction magnetic sensor can detect a full-band magnetic field signal in two detection modes, and the device size is reduced by using the MEMS technology.
Description
technical field [0001] The invention relates to the technical field of sensors, in particular to a multiferroic heterojunction magnetic sensor, its preparation method and electronic equipment. Background technique [0002] According to its principle, electronic equipment is mainly divided into several categories: Hall sensor, magnetosensitive diode sensor, giant magneto-impedance sensor, superconducting quantum interferometer, tunnel junction magnetoresistive sensor, fluxgate sensor, anisotropic magnetoresistive sensor , induction coil, etc. [0003] With the advancement of biological science and technology, traditional sputtering projects such as nuclear magnetic resonance, X-ray, and electrocardiogram need to be supplemented by other projects to complete medical diagnosis. The acquisition of brain magnetic and cardiomagnetic signals plays an increasingly important role in it. The main frequency domain interval of the signal is between 1 and 20 Hz. [0004] The existing m...
Claims
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Login to View More IPC IPC(8): H01L41/12H01L41/20H01L41/06H01L41/47B81C1/00
CPCB81C1/0015B81C1/00158H10N35/80H10N35/101H10N35/85H10N35/01
Inventor 马炳和赵珂藜罗剑张彧晖邓进军
Owner NORTHWESTERN POLYTECHNICAL UNIV