Tunable array integrated broadband terahertz wave-absorbing resonatorbased on vanadium dioxide

A vanadium dioxide and terahertz technology, applied in the direction of electrical components, magnetic/electric field shielding, antennas, etc., can solve the problems of difficult adjustment, single tuning method, complicated preparation process, etc., and achieve the effect of active tuning and absorption

Active Publication Date: 2021-08-10
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned types control the switching properties of the absorbing structure by controlling the phase transition properties of vanadium dioxide. It can tune the absorption rate in a narrow band, and the tuning method is single

Method used

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  • Tunable array integrated broadband terahertz wave-absorbing resonatorbased on vanadium dioxide
  • Tunable array integrated broadband terahertz wave-absorbing resonatorbased on vanadium dioxide
  • Tunable array integrated broadband terahertz wave-absorbing resonatorbased on vanadium dioxide

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Embodiment 1

[0032] From bottom to top, the bottom metal layer Au (mainly for reflection) is a square structure with a side length of 50um and a thickness of 5um. The intermediate dielectric layer is made of Al 2 o 3 The layer is a square structure with a side length of 50um and a thickness of 1.9um. The upper layer is a vanadium dioxide phase change layer with a side length of 50um and a thickness of 2.5um. The upper layer is a graphene adjustable conductance layer. The rate layer is a square structure with a side length of 50um and a thickness of 1um. The top periodic array metasurface layer is an Al layer. Each unit structure is a square and the overall thickness is 1um. The outer length of the square is 6um, the wall thickness is 1.5um, and the inside is I-type resonant columns with the same shape but different sizes. The resonant columns are placed symmetrically along the center of the square. There are two types of I-type resonant columns, the larger The I-type resonant column is tw...

Embodiment 2

[0034] From bottom to top, the bottom metal layer Au (mainly for reflection) is a square structure with a side length of 60um and a thickness of 4um. The middle dielectric layer or lossy dielectric layer is made of SiO 2 The layer is a square structure with a side length of 60um and a thickness of 1.5um. The upper layer is a vanadium dioxide phase change layer with a side length of 60um and a thickness of 2.5um. The upper layer is a graphene adjustable conductance layer. The rate layer is a square structure with a side length of 60um and a thickness of 0.5um. The top periodic array metasurface layer is an Al layer. Each unit structure is square and the overall thickness is 1um. The outer length of the square is 7um, the wall thickness is 1um, and the interior is I-type resonant columns of different sizes with the same shape. The resonant columns are placed symmetrically along the center of the square. There are two types of I-type resonant columns. The type I resonance column ...

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Abstract

The invention relates to a tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide. The tunable array integrated broadband terahertz wave-absorbing resonator comprises a metal reflecting layer, a middle dielectric layer, a vanadium dioxide phase change layer, a graphene adjustable conductivity layer, a top conductive electrode and metal resonant cavities which are arranged in a periodic array from bottom to top. According to the metal resonant cavity, specific geometric parameters and structures are designed, so that the whole metamaterial wave-absorbing structure generates electromagnetic resonance at a specific frequency, and the wave-absorbing structure with relatively high modulation depth is designed by utilizing the thermally induced phase change property of vanadium dioxide and the huge change of optical and electrical parameters in a semiconductor phase state and a metal phase state; and based on the adjustable conductivity property of graphene, the Fermi level of graphene is changed through external voltage, and the dielectric parameters of the wave absorbing structure are changed, so that the absorption wavelength range is changed. By combining the tuning characteristics of the two materials, the broadband absorber is actively tuned through heat/electricity, and the designed structure is compatible with the process and is easy to implement.

Description

technical field [0001] The invention belongs to the field of electromagnetic wave absorption, in particular to a vanadium dioxide-based tunable array integrated broadband terahertz wave-absorbing resonator. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with a band frequency in the range of 0.1-10THz (wavelength 30-3000μm), which coincide with millimeter waves in the long-wave band and coincide with infrared light in the short-wave band, which is very important but rarely Explore parts of the electromagnetic spectrum. Terahertz waves have good penetrating ability to dielectric materials, and can be used as a means of detecting hidden objects; the typical pulse width of terahertz pulses is on the order of picoseconds, and terahertz time-domain spectra with high signal-to-noise ratio can be obtained, which is easy to detect for various Spectral analysis of various materials; terahertz systems are widely used in many fields such as semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00H05K9/00
CPCH01Q17/00H05K9/0073
Inventor 宋金会李子兴王志立张西京孟德峰柳永博
Owner DALIAN UNIV OF TECH
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