Analog predistorter with field-effect transistor connected in series with reflection-type Schottky diode

A technology of Schottky diodes and field effect transistors, which is applied in the direction of improving amplifiers to reduce nonlinear distortion, amplifiers, components of amplifiers, etc., and can solve problems such as application field limitations and poor pre-distortion accuracy

Active Publication Date: 2021-08-10
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the internal Schottky diode will greatly suppress the even-order harmonics in the nonlinear signal generated by itself, which leads to its excellent performance in improving the third-order intermodulation distortion of traditional narrow-band modulation signals. However, when it is used for the most widely used wideband modulation signal, the predistortion accuracy is very poor, so that its application field is greatly limited.

Method used

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  • Analog predistorter with field-effect transistor connected in series with reflection-type Schottky diode
  • Analog predistorter with field-effect transistor connected in series with reflection-type Schottky diode
  • Analog predistorter with field-effect transistor connected in series with reflection-type Schottky diode

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Effect test

Embodiment 1

[0019] Embodiment 1: An analog predistorter of field effect transistor series reflective Schottky diodes, including a first bias circuit 1, a second bias circuit 2, a third bias circuit 3, and a model of MA4E-2037 A Schottky diode DIODE1 and a field effect transistor X1 whose model is ATF-34143, the first bias circuit 1 has an input terminal, a first output terminal and a second output terminal, and the second bias circuit 2 has an input terminal and an output terminal, The third bias circuit 3 has an input end and an output end, the input end of the first bias circuit 1 is the input end of the analog predistorter, and is used to access the original radio frequency signal RFin, and the first output of the first bias circuit 1 The terminal is connected to the positive pole of the Schottky diode DIODE1, the negative pole of the Schottky diode DIODE1 is grounded, the second output terminal of the first bias circuit 1 is connected to the input terminal of the second bias circuit 2,...

Embodiment 2

[0022] Embodiment 2: This embodiment is basically the same as Embodiment 1, the only difference is: if figure 2 with image 3 As shown, in this embodiment, the second output terminal of the first bias circuit 1 is connected to the input terminal of the second bias circuit 2 through a nonlinear circuit, and the nonlinear circuit is composed of a nonlinear unit 7, and the nonlinear unit 7 includes the twenty-second rectangular microstrip line TL22, a Schottky diode DIODE2 of the model MA4E-2037 and a third T-junction Tee3, the third T-junction Tee3 has a first port, a second port and a third port , one end of the twenty-second rectangular microstrip line TL22 is the input end of the nonlinear unit, the other end of the twenty-second rectangular microstrip line TL22 is connected to the first port of the third T-shaped junction Tee3, and the third T-shaped The second port of the junction Tee3 is connected to the anode of the Schottky diode DIODE2, the cathode of the Schottky dio...

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Abstract

The invention discloses an analog predistorter of a field effect transistor series connection type Schottky diode, and the analog predistorter comprises a first bias circuit, a second bias circuit, a third bias circuit, a Schottky diode and a field effect transistor; the first bias circuit performs predistortion by using nonlinearity generated by the Schottky diode and adopting a bias voltage control mode; the second bias circuit and the third bias circuit respectively perform pre-distortion by using nonlinearity generated by the field effect transistor, the first bias circuit performs pre-distortion processing on a radio frequency original signal RFin to generate a first distortion signal V1(t), and the second bias circuit performs pre-distortion processing on the first distortion signal V1(t) by adopting a mode of controlling grid voltage of the field effect transistor, and generates a second distortion signal V2(t); the third bias circuit generates a second distortion signal V2(t), and the third bias circuit carries out pre-distortion processing on the second distortion signal V2(t) by adopting a mode of controlling the drain voltage of the field effect transistor. The analog predistorter has the advantages of simple structure, small size, low cost, easiness in operation and implementation, and higher predistortion precision when acting on a broadband modulation signal.

Description

technical field [0001] The invention relates to an analog predistorter, in particular to an analog predistorter with field effect transistors connected in series with reflective Schottky diodes. Background technique [0002] The fifth-generation mobile communication technology (5G) Sub-6GHz frequency band has been put into commercial use. 5G communication technology has the characteristics of high data rate, low delay, large system capacity and large-scale equipment connection. Entertainment methods and other aspects are increasingly demanding, and it can meet the communication requirements of high-tech industries such as the Internet of Things, autonomous driving, and telemedicine. [0003] The application of new technologies such as multiple input multiple output (MIMO) antenna diversity technology and orthogonal frequency division multiplexing (OFDM) digital modulation method has greatly improved the spectrum utilization rate. At the same time, the communication bandwidth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H04L25/49
CPCH03F1/3241H04L25/49
Inventor 许高明欧阳贵喜韩栋刘太君黄力
Owner NINGBO UNIV
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