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A kind of analog predistorter of FET series reflection Schottky diode

A technology of Schottky diodes and field effect transistors is used in improving amplifiers to reduce nonlinear distortion, components of amplifiers and amplifying devices, etc., and can solve problems such as application field limitations and poor predistortion accuracy.

Active Publication Date: 2022-07-26
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the internal Schottky diode will greatly suppress the even-order harmonics in the nonlinear signal generated by itself, which leads to its excellent performance in improving the third-order intermodulation distortion of traditional narrow-band modulation signals. However, when it is used for the most widely used wideband modulation signal, the predistortion accuracy is very poor, so that its application field is greatly limited.

Method used

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  • A kind of analog predistorter of FET series reflection Schottky diode
  • A kind of analog predistorter of FET series reflection Schottky diode
  • A kind of analog predistorter of FET series reflection Schottky diode

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Embodiment 1

[0019] Embodiment 1: An analog predistorter of a FET series reflection Schottky diode, including a first bias circuit 1, a second bias circuit 2, a third bias circuit 3, and a model of MA4E-2037 A Schottky diode DIODE1 and a field effect transistor X1 with a model of ATF-34143, the first bias circuit 1 has an input end, a first output end and a second output end, and the second bias circuit 2 has an input end and an output end, The third bias circuit 3 has an input end and an output end. The input end of the first bias circuit 1 is the input end of the analog predistorter, which is used to access the original radio frequency signal RFin, and the first output of the first bias circuit 1 The terminal is connected to the anode of the Schottky diode DIODE1, the cathode of the Schottky diode DIODE1 is grounded, the second output terminal of the first bias circuit 1 is connected to the input terminal of the second bias circuit 2, and the second output terminal of the second bias circ...

Embodiment 2

[0022] Embodiment 2: This embodiment is basically the same as Embodiment 1, the only difference is: figure 2 and image 3 As shown, in this embodiment, the second output terminal of the first bias circuit 1 is connected to the input terminal of the second bias circuit 2 through a nonlinear circuit. The nonlinear circuit is composed of a nonlinear unit 7. The nonlinear unit 7 Comprising a twenty-second rectangular microstrip line TL22, a Schottky diode DIODE2 of type MA4E-2037 and a third T-junction Tee3 having a first port, a second port and a third port , one end of the twenty-second rectangular microstrip line TL22 is the input end of the nonlinear unit, the other end of the twenty-second rectangular microstrip line TL22 is connected to the first port of the third T-type junction Tee3, and the third T-type The second port of the junction Tee3 is connected to the anode of the Schottky diode DIODE2, the cathode of the Schottky diode DIODE2 is grounded, and the third port of ...

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Abstract

The invention discloses an analog predistorter of a field effect transistor connected in series with a reflective Schottky diode, comprising a first bias circuit, a second bias circuit, a third bias circuit, a Schottky diode and a field effect transistor, The first bias circuit utilizes the nonlinearity generated by the Schottky diode itself to perform predistortion by controlling the bias voltage. The second bias circuit and the third bias circuit utilize the nonlinearity generated by the FET itself to perform predistortion. Distortion, the first bias circuit performs pre-distortion processing on the original radio frequency signal RFin to generate a first distorted signal V 1 (t), the second bias circuit controls the gate voltage of the FET to the first distortion signal V 1 (t) Perform pre-distortion processing to generate a second distorted signal V 2 (t), the third bias circuit controls the drain voltage of the FET to the second distortion signal V 2 (t) Perform predistortion processing; the advantages are simple structure, small volume, low cost, easy operation and realization, and high predistortion precision when acting on a broadband modulated signal.

Description

technical field [0001] The invention relates to an analog predistorter, in particular to an analog predistorter with field effect transistors connected in series with reflective Schottky diodes. Background technique [0002] The fifth-generation mobile communication technology (5G) Sub-6GHz frequency band has been put into commercial use. 5G communication technology has the characteristics of high data rate, low delay, large system capacity and large-scale equipment connection, which can not only meet the needs of consumers for communication quality, It can meet the increasingly high requirements in terms of entertainment and other aspects, and can also meet the communication requirements of high-tech industries such as the Internet of Things, autonomous driving, and telemedicine. [0003] The application of new technologies such as multiple-input multiple-output (MIMO) antenna diversity technology, orthogonal frequency division multiplexing (OFDM) digital modulation method,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/32H04L25/49
CPCH03F1/3241H04L25/49
Inventor 许高明欧阳贵喜韩栋刘太君黄力
Owner NINGBO UNIV
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