Phase change memory and method of making the same

Abstract

The invention provides a phase change memory and a preparation method thereof. The phase change memory includes a first contact plug penetrating through the auxiliary word line layer and the auxiliary bit line layer in sequence, and the outer sidewall of the first contact plug is provided with an isolation layer, so as to prevent the conductive material layer in the first contact plug from interacting with each other. Auxiliary word lines / auxiliary bit lines interfere with each other. In this way, it is beneficial to flexibly set auxiliary bit lines, auxiliary word lines and first contact plugs, prevent regions with too low pattern density in the corresponding bit line layers and word line layers, and help improve the prepared bit line layers. and the film quality of the word line layer, and can increase the number of first contact plugs. In addition, since the arrangement regions of the auxiliary bit lines, the auxiliary word lines and the first contact plugs can allow for spatial overlap, an effective reduction in device size can also be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase change memory and a preparation method thereof. Background technique [0002] The rapid development of information technology requires a large number of high-performance storage devices. Low voltage, low power consumption, high speed and high density are the inevitable development trends of storage technology. Phase change memory PCM is a new generation of non-volatile solid-state semiconductor memory developed on the basis of CMOS integrated circuits. Compared with today's mainstream products, it has many advantages. For example, in terms of storage density, the current mainstream memory has a limit on the technology node of more than 20 nanometers, and cannot be further compactly integrated; while the phase change memory can reach the order of 5 nanometers. And, in terms of storage speed, the phase change resistance of the phase change memory is 100 times faster...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a phase change memory to solve the problem of low film quality of the existing phase change memory

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