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Wafer temperature measuring method

A technology of temperature measurement and wafer, applied in thermometers, measuring devices, measuring heat, etc., can solve problems such as measuring the temperature of semiconductor wafers

Inactive Publication Date: 2021-09-17
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, TC measurement is suitable for some high-temperature processes (for example, the process temperature is less than 400°C), and when the temperature of the high-temperature process is too high (for example, the process temperature is greater than 400°C), TC cannot be used to measure the temperature of the semiconductor wafer

Method used

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Embodiment Construction

[0032] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0033] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0034] "Above" described in the present invention refers to being located above the plane of the substrate, which may refer to direct contact between materials, or may be arranged at intervals.

[0035] In the present application, the term "semiconductor structure" refers to a general designation of the entire semiconductor structure formed in various steps of manufacturing a memory device, including all layers or regions that have been formed. In the following, many specific details of the prese...

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Abstract

The wafer temperature measuring method is used for measuring the temperature of a wafer to be measured in the heat treatment process and comprises the steps: forming a temperature measuring wafer on the to-be-measured wafer, wherein the temperature measuring wafer at least comprises a phase change material layer; obtaining the volume change of at least one position of the temperature measurement wafer in the heat treatment process; and determining the temperature of the to-be-measured wafer according to the volume change of at least one position of the temperature measurement wafer. The invention further discloses a wafer temperature measuring device, the actual temperature of the corresponding position on the to-be-measured wafer is calibrated through the volume change of at least one position of the temperature measuring wafer located on the to-be-measured wafer in the heat treatment process, point-to-point temperature measurement is achieved, and the measurement accuracy is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a wafer temperature measurement method. Background technique [0002] In semiconductor manufacturing, different processes require different temperatures, and some process temperatures even reach above 1000°C. In the prior art, the semiconductor wafer is usually heated in a thermal processing chamber to meet the corresponding process temperature. Thermal processing chambers refer to equipment that rapidly heats objects, such as semiconductor wafers. Such equipment typically includes a substrate holder for holding one or more semiconductor wafers or other objects, and an energy source, such as heat lamps and / or heaters, for heating the wafers. During heat treatment, the semiconductor wafer is heated under controlled conditions according to a preset temperature regime. [0003] Many semiconductor heating processes require wafers to be heated to high temperatu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K5/00
CPCG01K5/00
Inventor 熊攀毛格张子玉
Owner YANGTZE MEMORY TECH CO LTD
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