Silicon wafer detection device

A detection device, silicon wafer technology, applied in measurement devices, optical testing flaws/defects, instruments, etc., can solve the problems of reduced detection accuracy, uneven image grayscale, poor contrast, etc., and achieve improved lighting effects and grayscale distribution. The effect of uniformity and improved detection accuracy

Active Publication Date: 2021-09-24
诺德凯(苏州)智能装备有限公司
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Problems solved by technology

Among them, the light emitted by the light source is obliquely irradiated on the baffle, and then scattered by the baffle to the silicon wafer, resulting in a lower brightness of the silicon wafer on the side away from the light source, that is, close to the infrared camera, making the collected image darker. It is black on the collected image, which causes the hidden cracks on the image collected by the camera to not be clearly displayed, which makes the gray scale of the collected image uneven and the contrast is poor, which is not conducive to the processing of the collected image and reduces the The detection accuracy also reduces the accuracy of the detection results

Method used

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Embodiment Construction

[0034] In order to make the technical problems solved by the present invention, the technical solutions adopted and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only the technical solutions of the present invention. Some, but not all, embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0035] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected" and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integrated ; It can be a mechanical connection or an electrical connection; it can be a d...

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Abstract

The invention relates to the technical field of silicon wafer detection equipment and discloses a silicon wafer detection device. The device comprises an image acquisition part, a baffle assembly and a light source assembly, wherein the image acquisition part is used for acquiring an image of an acquisition area on the to-be-detected silicon wafer; the baffle plate assembly is arranged between the image acquisition part and the silicon wafer to be detected and comprises a first baffle plate; the light source assembly comprises two light sources, one light source is located on the first side of the first baffle, the other light source and the image acquisition part are located on the second side of the first baffle, the first side and the second side are arranged oppositely, and light emitted by the light source located on the first side irradiates the first baffle and can be scattered into an acquisition area through the first baffle; and light emitted by the light source located on the second side can reach the collection area from the second side. According to the device, the collected image is uniform in gray level distribution, the contrast ratio of the image is improved, the defect of the silicon wafer is easier to analyze, and detection precision of the silicon wafer is improved.

Description

technical field [0001] The invention relates to the technical field of silicon wafer detection equipment, in particular to a silicon wafer detection device. Background technique [0002] In the field of photovoltaics, in order to ensure the product quality of silicon wafers, it is necessary to detect the defects of silicon wafers. The hidden crack of the silicon wafer is a kind of relatively concealed non-penetrating crack, which is invisible under normal conditions. When the viscose surface is about to be cut through, due to the internal thermal stress of crystalline silicon and the stress in mechanical processing, etc. The cracks caused by various reasons may be located on either side of the silicon wafer because the crack does not penetrate. The traditional detection method is to blow air on the surface of the silicon wafer. During the process of rapid steam covering and rapid drying, the cracks are quickly displayed. and disappear. There are two obvious defects in this...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/88
CPCG01N21/8851G01N21/8806G01N2021/8887
Inventor 卢亚宾王维王聚杜若愚刘中海陈淼淼马行程智韩鑫顾一鹏朱江兵梁坤牛广升
Owner 诺德凯(苏州)智能装备有限公司
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