Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems affecting the output quantity of single-wafer devices and the effective area occupation of devices, so as to improve the moisture resistance, reduce the area, and reduce the occupation of the area Effect

Active Publication Date: 2022-05-31
深圳市时代速信科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the DC test pads of the existing semiconductor devices are all set in the passive area of ​​the device, so that the effective area of ​​the device will be occupied, thereby affecting the number of devices produced on a single wafer

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0050] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the present disclosure.

[0054] S100, forming a semiconductor layer 20 on the substrate 10, the semiconductor layer 20 comprising an active region 21 and a space between the active region 21

[0056] S300, the gate 50 and the gate pad 60 are metal interconnected, and the drain 40 and the drain pad 70 are metal interconnected

[0058] It should be noted that the gate pad 60 and the drain pad 70 of the present application are arranged in the inactive region 22, wherein the gate pad

[0059] S400, a source test pad 80 is formed on the source electrode 30 of the first device structure 100, as shown in FIG. 3 .

[0060] That is, in the present embodiment, the source test pad 80 is provided on the source electrode 30 of the active region 21. So, the electrical test

[0062] Please refer to FIG. 8 , optionally, in the above step S400, a source test is formed on th...

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Abstract

A semiconductor device and a preparation method thereof relate to the technical field of semiconductors. The preparation method comprises: forming a semiconductor layer on a substrate, the semiconductor layer including an active area and an inactive area outside the active area; making a source, a gate, and a drain on the active area; Fabricate gate pads and drain pads; metal interconnect the gate and gate pads, and metal interconnect the drain and drain pads to form a first device structure; in the first device structure A source test pad is formed on the source of the The semiconductor device is prepared by the above-mentioned preparation method. The preparation method can reduce the area of ​​the semiconductor device and improve the integration degree of the semiconductor device.

Description

Semiconductor device and method of making the same technical field [0001] The present invention relates to the field of semiconductor technology, in particular, to a semiconductor device and a preparation method thereof. Background technique [0002] With the demand for miniaturization of semiconductor devices and high integration of semiconductor devices, the size of semiconductor devices has become increasingly It is getting smaller and smaller, and accordingly the problem of its electrical performance is becoming more and more prominent. Therefore, in order to ensure the quality of semiconductor devices, The electrical testing of the device structure becomes particularly important. [0003] In order to perform electrical tests on traditional semiconductor devices, a direct current that is electrically connected to the active area of ​​the device is usually set. Test pads, so that after all the manufacturing processes are completed, test probes are used to conduct ele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60H01L23/482H01L23/544
CPCH01L24/03H01L22/32H01L23/482H01L23/4824
Inventor 杨天应刘丽娟
Owner 深圳市时代速信科技有限公司
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