Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as the occupation of the effective area of ​​the device, affecting the output quantity of a single wafer device, etc., to reduce the area, improve the moisture resistance, and reduce the occupation of the area. Effect

Active Publication Date: 2021-09-24
深圳市时代速信科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the DC test pads of the existing semiconductor devices are all set in the passive area of ​​the device, so that the effective area of ​​the device will be occupied, thereby affecting the number of devices produced on a single wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The embodiments set forth below represent the information necessary to enable one skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description with reference to the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not specifically addressed herein. It should be understood that these concepts and applications are within the scope of this disclosure and the appended claims.

[0047] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the presen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor device and a preparation method thereof, and relate to the technical field of semiconductors. The preparation method comprises the following steps: forming a semiconductor layer on a substrate, wherein the semiconductor layer comprises an active region and a passive region outside the active region; manufacturing a source electrode, a grid electrode and a drain electrode on the active region, and manufacturing a grid electrode bonding pad and a drain electrode bonding pad on the passive region; performing metal interconnection on the grid electrode and the grid electrode bonding pad, and performing metal interconnection on the drain electrode and the drain electrode bonding pad to form a first device structure; forming a source test pad on the source of the first device structure. The semiconductor device is prepared by the preparation method. The preparation method can reduce the area of the semiconductor device and improve the integration level of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] With the miniaturization of semiconductor devices and the demand for high integration of semiconductor devices, the size of semiconductor devices is getting smaller and smaller, and correspondingly, the problems of their electrical performance are becoming more and more prominent. Therefore, in order to ensure the quality of semiconductor devices, it is particularly important to conduct electrical tests on semiconductor device structures. [0003] In order to perform electrical tests on traditional semiconductor devices, a DC test pad is usually provided that is electrically connected to the active area of ​​the device. In this way, after all the manufacturing processes are completed, test probes are used to perform electrical tests on the test pad, and By analyzing test data, problems ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L23/482H01L23/544
CPCH01L24/03H01L22/32H01L23/482H01L23/4824
Inventor 杨天应刘丽娟
Owner 深圳市时代速信科技有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com