Memory circuit system, device and writing method

Abstract

The application proposes a memory circuit system, device and writing method. The memory circuit system includes: a plurality of storage circuits arranged in a matrix, and the input terminals of each storage circuit are respectively connected to word lines, bit lines, and control gate lines. And chip select signal line; write amplifier circuit, its input end is connected with decoder circuit, output end is respectively connected with bit line and chip select signal line; control line generation circuit, its input end is connected with decoder circuit, output end respectively connected to the word line and the control gate line; the decoder circuit records and transmits address information to the write amplifier circuit or the control line generation circuit; the integrated control circuit transmits the control signal to the write amplifier circuit and the control line generation circuit, and decodes The memory circuit jointly controls the word line, the bit line, the control gate line and the chip selection signal line, so that the storage circuit performs multiple writing operations in succession. The application can be directly written without erasing before writing, thereby improving the writing speed and the utilization rate of the storage space of the EEPROM.

Description

technical field [0001] The present application belongs to the technical field of memory, and in particular relates to a memory circuit system, device and writing method. Background technique [0002] EEPROM (Electrically Erasable Programmable read only memory) usually refers to an electrically erasable programmable read-only memory. Because of its user-changeable, electrical signal erasable and programmable, and data not lost after power-off, it is often used in chip to store a large amount of important data. During the normal working process of the chip, EEPROM will be read, erased and written multiple times, and the length of time for reading, erasing or writing EEPROM will affect the length of time for the chip to execute instructions. [0003] At present, most of the writing process of existing EEPROM is: before each writing, first read out the data of the whole page, and write it into the cache, and then perform page erasing (byte erasing or block erasing can also be p...

AI Technical Summary

Problems solved by technology

In this way, the overall writing process of EEPROM is relatively cumbersome, and the writing speed is slow, which will reduce the utilization rate of EEPROM storage space

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