Doping device and method for Czochralski silicon single crystal
A technology of Czochralski silicon and single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low arsenic and phosphorus doping rate, high resistivity of silicon single crystal, and high pollution in the furnace , to increase the doping rate, reduce volatilization and avoid bubbling
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Embodiment 1
[0050] The N-type 6-inch arsenic-doped single crystal is drawn, the polysilicon feeding amount is 60kg, and the crystal orientation is .
[0051] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1280°C, the argon flow in the single crystal furnace 200 is constant at 75L / min, and keep the inside of the single crystal furnace 200. The furnace pressure is 20Kpa, and it is stable under this parameter for half an hour. Put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, and cover the second quartz cover 114, row The gas sheet 116 and the first quartz cover 113 lower the entire doping part 100 in the vertical direction to the lower end of the immersion tube 112 and enter 20 mm below the liquid level of the silicon melt to perform doping, and observe the volatilization of arsenic in the quartz c...
Embodiment 2
[0057] The N-type 6-inch arsenic-doped single crystal is drawn, the polysilicon feeding amount is 60kg, and the crystal orientation is .
[0058] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1320°C, the argon gas flow in the single crystal furnace 200 is constant at 85L / min, and keep the single crystal furnace 200 inside. The furnace pressure is 30Kpa, and it is stable for half an hour under this parameter. Put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, and cover the second quartz cover 114, row The gas sheet 116 and the first quartz cover 113 lower the entire doping component 100 in the vertical direction to the lower end of the immersion tube 112 and enter 30 mm below the liquid level of the silicon melt to perform doping, and observe the volatilization of arsenic in the quartz...
Embodiment 3
[0064] The N-type 6-inch phosphorus-doped single crystal was drawn, with a feeding amount of 60kg, and the crystal orientation was .
[0065] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1280°C, the argon flow in the single crystal furnace 200 is constant at 75L / min, and keep the inside of the single crystal furnace 200. The furnace pressure is 20Kpa, stable for half an hour under this parameter, put 200g of phosphorus in the quartz cup 130, hang the quartz cup 130 on the hook of the second quartz cover 114, cover the second quartz cover 114 in turn, exhaust the Sheet 116 and first quartz cover 113, lower the entire doping part 100 in the vertical direction to 20 mm below the liquid level of the silicon melt at the lower end of the immersion tube 112, and perform doping, observe the volatilization of phosphorus in the quartz cup 130, wait for the ...
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