Doping device and method for Czochralski silicon single crystal

A technology of Czochralski silicon and single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low arsenic and phosphorus doping rate, high resistivity of silicon single crystal, and high pollution in the furnace , to increase the doping rate, reduce volatilization and avoid bubbling

Active Publication Date: 2022-07-01
宁夏中欣晶圆半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, it is necessary to provide a doping device and method for Czochralski silicon single crystal to solve the problems of low arsenic and phosphorus doping rate, high pollution in the furnace, and high resistivity of silicon single crystal

Method used

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  • Doping device and method for Czochralski silicon single crystal
  • Doping device and method for Czochralski silicon single crystal
  • Doping device and method for Czochralski silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The N-type 6-inch arsenic-doped single crystal is drawn, the polysilicon feeding amount is 60kg, and the crystal orientation is .

[0051] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1280°C, the argon flow in the single crystal furnace 200 is constant at 75L / min, and keep the inside of the single crystal furnace 200. The furnace pressure is 20Kpa, and it is stable under this parameter for half an hour. Put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, and cover the second quartz cover 114, row The gas sheet 116 and the first quartz cover 113 lower the entire doping part 100 in the vertical direction to the lower end of the immersion tube 112 and enter 20 mm below the liquid level of the silicon melt to perform doping, and observe the volatilization of arsenic in the quartz c...

Embodiment 2

[0057] The N-type 6-inch arsenic-doped single crystal is drawn, the polysilicon feeding amount is 60kg, and the crystal orientation is .

[0058] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1320°C, the argon gas flow in the single crystal furnace 200 is constant at 85L / min, and keep the single crystal furnace 200 inside. The furnace pressure is 30Kpa, and it is stable for half an hour under this parameter. Put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, and cover the second quartz cover 114, row The gas sheet 116 and the first quartz cover 113 lower the entire doping component 100 in the vertical direction to the lower end of the immersion tube 112 and enter 30 mm below the liquid level of the silicon melt to perform doping, and observe the volatilization of arsenic in the quartz...

Embodiment 3

[0064] The N-type 6-inch phosphorus-doped single crystal was drawn, with a feeding amount of 60kg, and the crystal orientation was .

[0065] Put 60kg of silicon raw material in the quartz crucible 210 for materialization. After the materialization is completed, set the temperature in the single crystal furnace 200 to 1280°C, the argon flow in the single crystal furnace 200 is constant at 75L / min, and keep the inside of the single crystal furnace 200. The furnace pressure is 20Kpa, stable for half an hour under this parameter, put 200g of phosphorus in the quartz cup 130, hang the quartz cup 130 on the hook of the second quartz cover 114, cover the second quartz cover 114 in turn, exhaust the Sheet 116 and first quartz cover 113, lower the entire doping part 100 in the vertical direction to 20 mm below the liquid level of the silicon melt at the lower end of the immersion tube 112, and perform doping, observe the volatilization of phosphorus in the quartz cup 130, wait for the ...

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Abstract

A doping device and method for Czochralski silicon single crystal belong to the technical field of equipment for producing single crystal silicon by Czochralski method. It is built in the quartz inner tank. The upper end of the inner tank body is covered with a first quartz cover and a second quartz cover in sequence from top to bottom. An exhaust cavity is formed between the first quartz cover and the second quartz cover. The second quartz cover A first vent hole is arranged on the top, a pressure regulating pipe is vertically installed on the first vent hole, the exhaust sheet is covered on the first vent hole, and a second vent hole is arranged on the ring wall of the inner tank body, and the second vent hole is arranged on the ring wall of the inner tank body. The air hole is located between the first quartz cover and the second quartz cover. During the doping process, the pressure in the quartz inner tank can be adjusted through the exhaust sheet, the pressure regulating tube and the ventilation hole, so as to avoid the occurrence of bubbling and reduce the The volatilization of the dopant enables the vaporized dopant to be fully integrated into the silicon melt for doping, thereby increasing the doping rate and reducing the pollution in the furnace.

Description

technical field [0001] The invention belongs to the technical field of equipment for producing single crystal silicon by a Czochralski method, and in particular relates to a doping device and method for a Czochralski silicon single crystal. Background technique [0002] Heavy-doped silicon single wafer is the most ideal epitaxial substrate material and is widely used in integrated circuits and high-end power devices. Market demand is also increasing, especially for resistivity requirements. At present, arsenic and phosphorus N-type silicon single crystal doping mainly adopts the doping method of vapor volatilization. [0003] Chinese patent CN1289722C discloses a doping method and its doping funnel for the manufacture of heavily doped Czochralski silicon single crystal. The funnel nozzle is immersed in the liquid level 5 to 10mm deep, so that the vaporized dopant enters the silicon melt through the nozzle and is absorbed, which improves the doping rate of phosphorus and ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B15/20C30B29/06
CPCC30B15/04C30B15/20C30B29/06
Inventor 刘进王忠保李巨晓芮阳魏兴彤马小龙虎永慧
Owner 宁夏中欣晶圆半导体科技有限公司
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