Vapor phase epitaxy system and maintenance operation method thereof

A technology of vapor phase epitaxy system and air inlet flange, which is applied in the field of vapor phase epitaxy system and its maintenance operation, can solve the problems of low utilization rate and inconvenient maintenance of large-sized reaction chamber, achieve less dead zone at low temperature, and improve equipment operation. efficiency and yield, and the effect of simplifying the maintenance process

Active Publication Date: 2021-11-05
楚赟精工科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a vapor phase epitaxy system and its mainten

Method used

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  • Vapor phase epitaxy system and maintenance operation method thereof
  • Vapor phase epitaxy system and maintenance operation method thereof
  • Vapor phase epitaxy system and maintenance operation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] figure 1A schematic diagram of an exemplary cross-sectional structure of the vapor phase epitaxy system 100 provided in this embodiment is shown. The vapor phase epitaxy system 100 includes a carrier plate support device 101, a cover body 105, a reaction chamber and a top cover assembly; the carrier plate support device 101 is used to support the carrier plate 102 at the top of the carrier plate support device 101, the The carrier support device 101 passes through the cover 105, and the cover 105 is connected to the carrier support device 102; the reaction chamber includes an inner chamber 103 and an outer chamber 104, and the inner chamber 103 is Reaction chamber, the inner chamber 103 is arranged in the outer chamber 104; the top cover assembly is located at one end of the reaction chamber, the top cover assembly includes an air inlet pipeline 110 and an air inlet flange 111, The inlet flange 111 is connected with the outer chamber 104 by a fastening device for seali...

Embodiment 2

[0060] The structure of the vapor phase epitaxy system described in this embodiment is substantially the same as that of the vapor phase epitaxy system 100 described in Embodiment 1. The difference between the two is that in Embodiment 1, only the external heater 108, and in this embodiment, in addition to the external heater 108 in the outer chamber 104, an internal heater 109 is also provided at a position close to the carrier 102 in the carrier support device 101, That is, the vapor phase epitaxy system in this embodiment adopts a double heating system.

[0061] Specifically, please continue to refer to figure 1 . Such as figure 1 As shown, the outer chamber 104 is provided with an external heater 108, and the external heater can be a thermal wall type external heater, located on the outer wall of the inner chamber 103, for heating the inner chamber 103; An internal heater 109 is disposed in the disc supporting device 101 close to the disc 102 . Optionally, the internal...

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Abstract

The invention provides a vapor phase epitaxy system. The vapor phase epitaxy system comprises a carrying disc supporting device, a cover body, a reaction chamber and a top cover assembly. The carrying disc supporting device penetrates through the cover body, and the cover body is connected with the carrying disc supporting device; the reaction chamber comprises an inner chamber and an outer chamber, and the inner chamber is arranged in the outer chamber; the top cover assembly is located at one end of the reaction chamber and comprises an air inlet pipeline and an air inlet flange, the air inlet flange is connected with the outer chamber through a fastening device, and the air inlet pipeline communicates with the inner chamber to supply air to the inner chamber; an opening is formed in the other end, away from the top cover assembly, of the inner chamber, the cover body is used for conducting airtight opening and closing on the opening of the inner chamber, and the carrying disc supporting device is movably arranged in the inner chamber; and the reaction chamber can move along with the carrying disc supporting device through the cover body, so that closing between the top cover assembly and the reaction chamber is achieved. According to the vapor phase epitaxy system provided by the invention, the chamber can be opened from different positions under different working conditions by introducing a double-lifting structure of the reaction chamber and the carrying disc supporting device, so that equipment maintenance is facilitated, and the maintenance process is simplified.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to the field of epitaxial growth technology, in particular to a vapor phase epitaxy system and a maintenance operation method thereof. Background technique [0002] III-V compound semiconductors have the advantages of wide band gap, high electron saturation drift rate, high breakdown electric field strength, strong radiation resistance, small dielectric constant, good thermal stability and stable chemical properties, so they are widely used in light-emitting diodes ( LED), laser diode (LD) and various semiconductor devices including electronic devices of high power, high frequency, high temperature transistors and integrated circuits. [0003] The vapor phase epitaxy process is a common means of growing III-V semiconductors. For example, in the hydride vapor phase epitaxy process, III-V semiconductors are formed by reacting hot gaseous metal halides (such as GaCl or AlCl, et...

Claims

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Application Information

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IPC IPC(8): C30B25/08C30B25/12C30B25/10C30B28/14
CPCC30B25/08C30B25/12C30B25/10C30B28/14
Inventor 林桂荣
Owner 楚赟精工科技(上海)有限公司
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