A b or v doped zn 2 geo 4 Nanomaterials and their preparation methods

A nanomaterial, zinc salt technology, applied in nanotechnology, nanotechnology, nanotechnology and other directions for materials and surface science, can solve the problems of poor rate performance, low first Coulomb efficiency, poor cycle stability, etc., to achieve high power Density, favorable for free migration, high energy density effect

Active Publication Date: 2022-06-24
ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It also faces defects such as low first Coulombic efficiency, poor cycle stability, and poor rate performance, so the preparation of doped Zn 2 GeO 4 can solve the above problems to a certain extent

Method used

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  • A b or v doped zn <sub>2</sub> geo <sub>4</sub> Nanomaterials and their preparation methods
  • A b or v doped zn <sub>2</sub> geo <sub>4</sub> Nanomaterials and their preparation methods
  • A b or v doped zn <sub>2</sub> geo <sub>4</sub> Nanomaterials and their preparation methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] B or V doped Zn of this example 2 GeO 4 The preparation method of the material includes the following steps:

[0031] 1) Slowly add 0.5 mmol of GeO to 30 mL of water 2 , 0.5mmol of Tris, stir, until the formation of uniform and transparent solution, the reaction ends;

[0032] 2) Take the solution prepared in step 1), under stirring, add 10ml of ethylene glycol and 1mmol of ZnCl respectively 2 , and then add 5mol% (with GeO 2 Boric acid or vanadium chloride as the benchmark), stir, put the solution obtained from the reaction into the reaction kettle, place it in a 160 ℃ oven, react for 3 h, naturally cool to room temperature, centrifuge, wash with distilled water, and put the solid obtained from the reaction into Put it in a 70°C oven to dry.

Embodiment 2

[0034] B or V doped Zn of this example 2 GeO 4 The preparation method of the material includes the following steps:

[0035] 1) Slowly add 0.5 mmol of GeO to 30 mL of water 2 , 0.5 mmol of Tris, and stirred until a uniform and transparent solution was formed, and the reaction was completed.

[0036] 2) Take the solution prepared in step 1), under stirring, add 10ml of ethylene glycol and 1mmol of ZnCl respectively 2 , and then add 5 mol % (with GeO 2 Boric acid or vanadium chloride as the benchmark), stir, put the solution obtained from the reaction into the reaction kettle, place it in a 120 °C oven, react for 5 h, naturally cool to room temperature, centrifuge, wash with distilled water, and put the solid obtained by the reaction into Put it in a 70°C oven to dry.

Embodiment 3

[0038] B or V doped Zn of this example 2GeO 4 The preparation method of the material includes the following steps:

[0039] 1) Slowly add 0.5 mmol of GeO to 20 mL of water 2 , 0.5 mmol of Tris, and stirred until a uniform and transparent solution was formed, and the reaction was completed.

[0040] 2) Take the solution prepared in step 1), under stirring, add 20ml of ethylene glycol and 1mmol of Zn(AC) respectively 2 , and then add 5 mol % (with GeO 2 Boric acid or vanadium chloride as the benchmark), stir, put the solution obtained from the reaction into the reaction kettle, place it in a 120 °C oven, react for 5 h, naturally cool to room temperature, centrifuge, wash with distilled water, and put the solid obtained by the reaction into Put it in a 70°C oven to dry.

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Abstract

The invention relates to a B or V doped Zn 2 GeO 4 Nanomaterial and preparation method thereof, GeO 2 and Tris are dissolved in a solvent, stirred to form a transparent and uniform Ge-Tris solution; add boric acid or vanadium chloride to the Ge-Tris solution, stir, then add ethylene glycol and zinc salt, stir well; Thermal reaction, naturally cool to room temperature after the reaction, filter and dry to obtain B or V doped Zn 2 GeO 4 nanomaterials. The present invention adopts hydrothermal method to prepare B or V doped Zn 2 GeO 4 Nanomaterials have controllable size, good dispersion, and excellent electron transport performance. They have excellent performance in applications such as anode materials for new lithium batteries, and have high industrial production value.

Description

technical field [0001] The present invention relates to a B or V doped Zn 2 GeO 4 The invention relates to a nanomaterial and a preparation method thereof, belonging to the technical field of electrode materials for energy storage devices. Background technique [0002] At present, the world's energy consumption mainly comes from non-renewable energy sources such as coal, oil and natural gas, but with the gradual reduction of non-renewable energy sources in the world, the research and development and utilization of new energy sources have become urgent. Lithium-ion battery is a new type of chemical energy that emerged in the 1990s. It has the characteristics of large specific capacity, good cycle performance, high operating voltage, long service life and low pollution. Among them, energy storage devices such as lithium-ion batteries have many advantages such as high energy density, high power density, long cycle life, low self-discharge rate, and “green” environmental prote...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G17/00B82Y30/00H01M4/485H01M10/0525
CPCC01G17/00B82Y30/00H01M4/485H01M10/0525C01P2002/72C01P2004/03C01P2004/64H01M2004/021H01M2004/027Y02E60/10
Inventor 曹阳王利霞方华张勇
Owner ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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