Mask surface particle defect detection method

Abstract

The invention discloses a mask surface particle defect detection method, which comprises the following steps: acquiring a transmission grayscale image T obtained by irradiating a mask with transmission light and a reflection grayscale image R obtained by irradiating the mask with reflection light, and performing inverse color operation on the reflection grayscale image to obtain a reflection grayscale inverse color image; obtaining direction angle data of a normal vector of each pixel in the transmission grayscale image and the reflection grayscale inverse color image, and constructing a transmission image angle matrix A and a reflection image angle matrix B according to the corresponding direction angle data; and performing data analysis on the transmission image angle matrix A and the reflection image angle matrix B to obtain defect positions, and constructing a defect result matrix C according to the defect positions. According to the invention, particle defects can be well identified, and the detection capacity is high.

Description

technical field [0001] The invention relates to a particle defect detection method on the surface of a mask, belonging to the technical field of semiconductor detection. Background technique [0002] At present, semiconductor masks generally use transmitted light detection for hard defects. The Cr layer is opaque, and the particles on its surface cannot be captured. Although the Cr layer does not affect photolithography, the particles may drift to the quartz layer or mosi Layers will lead to fatal defects in lithography. At the same time, in the fab, long-term use will form haze, which is also a fatal defect in lithography. How to effectively detect these non-logic defects is particularly important. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a method for detecting particle defects on the mask surface, which can identify particle defects well and has high detection pr...

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Problems solved by technology

[0002] At present, semiconductor masks generally use transmitted light detection for hard defects. The Cr layer is opaque, and the particles on its surface cannot be captured. Although the Cr layer does not affect photolithography, the particles may drift to the quartz layer or mosi layer, which will lead to fatal defects in lithography. At the same time, in the fab, long-term use will form haze, which is also a fatal defect in lithography. How to effectively detect these non-logic defects is particularly important.

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