Graphene film etching device

Abstract

The invention discloses a graphene film etching device, which comprises an outer shell, an etching device and a control device; the structure of the etching device comprises an etching disc, long-strip convex grooves, a through hole, a photoresistor, an irradiation lamp and a promotion device, wherein the long-strip convex grooves are formed in the bottom surface of the inner side of the etching disc, and the plurality of long-strip convex grooves are distributed at equal intervals in the axial direction of the etching disc; a plurality of through holes which are evenly distributed are formed in the etching disc; and photoresistors are fixedly installed on the inner sides of the bottom ends of the long-strip convex grooves. According to the graphene film etching device, the liquid amount and the rate of the etching liquid injected into the etching disc are in direct proportion to the area of the graphene film, so that the purpose of automatically controlling the injection liquid amount and the rate of the etching liquid is achieved, and the intelligent effect is achieved; and meanwhile, the problem of severe oscillation of the liquid level caused by poor injection amount and injection rate of the etching liquid is solved, and the graphene film is further stabilized.

Description

Technical field [0001] The present invention relates to a graphene thin film technology, and in particular as a graphene thin film etching apparatus. Background technique [0002] Now mainly carried out by chemical vapor deposition of graphene thin film is etched, when a number of external factors graphene thin film is etched using an etching solution, the need to control, thus the graphene thin film etching apparatus for external factors control regulation is essential. [0003] Conventional graphene thin film etching apparatus has the following technical drawbacks in use: First, the etching solution into the graphene thin film, due to the effect of inertia generated power potential, and thus the film opposite occurs with the etching solution sports, if not the brake, the film and the inner wall of the outer ring of the film collision damage, which causes high scrap rate film, which greatly affect the efficiency of production of the film; Second, always in the upper layer etchin...

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Problems solved by technology

[0003] The existing graphene film etching device has the following technical defects in use: one, when the graphene film is put into the etching solution, dynamic potential energy will be generated due to the effect of inertia, and then the film and the etching solution will be relatively If the movement is not stopped in time, the film will collide with the inner wall and the outer ring of the film will be damaged, resulting in a high scrap rate of the film, which greatly affects the production efficiency of the film; Chemical reaction, because the etchant is in a static state, which leads to less exchange between the solutions, making the concentration of the upper etchant lower and the concentration of the lower etchant higher, which directly affects the etching efficiency and etching quality. It will also waste the etchant of the lower layer

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