Gas injection device of semiconductor heat treatment equipment and semiconductor heat treatment equipment

Abstract

The invention provides a gas injection device of semiconductor heat treatment equipment and the semiconductor heat treatment equipment. The device comprises a gas inlet pipe, wherein a first pipe section comprises a first pipe wall and a second pipe wall nested in the first pipe wall, and a buffer space is formed between the inner wall of the first pipe wall and the outer wall of the second pipe wall; a plurality of first gas holes are uniformly distributed in the first pipe wall in the vertical direction, and the first gas holes are communicated with the buffer space and a process chamber respectively; a plurality of second gas holes are formed in the second pipe wall, and the second gas holes are communicated with the interior of the second pipe wall and the buffer space respectively; and the change rule of the inner diameter of the second pipe wall in the vertical direction and / or the arrangement rule of the plurality of second gas holes meet the requirement that the gas output of process gas flowing into the buffer space through the plurality of second gas holes at different positions in the vertical direction is the same. According to the technical scheme, different wafers can obtain uniform gas amount, and then the thickness uniformity of wafer film forming and the consistency of process results can be guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a gas injection device for semiconductor heat treatment equipment and semiconductor heat treatment equipment. Background technique [0002] Semiconductor heat treatment equipment, such as vertical heat treatment equipment, is the key equipment for film formation on the surface of semiconductor wafers. Its performance indicators such as process stability, uniformity, and reliability directly affect the electrical indicators and yield of chips. Especially when the vertical heat treatment equipment is applied to the film deposition process, in order to ensure uniform film thickness distribution between the wafers, the process gas should be supplied to the position of each wafer as evenly as possible. [0003] In the existing vertical heat treatment equipment, a gas injection device adopts an inverted U-shaped injection pipe, and a plurality of first air holes are distribut...

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Problems solved by technology

[0003] In the existing vertical heat treatment equipment, a gas injection device adopts an inverted U-shaped injection pipe, and a plurality of first air holes are distributed on the two pipe sections on both sides of the bend on the injection pipe, for The process gas is sprayed into the process chamber, wherein the first air holes on the two pipe sections are vertically interlaced to improve the uniformity of the gas output in the vertical direction, but the occupation of the above-mentioned U-shaped injection pipe The space is large, and it may not be able to be arranged in a processing container of a predetermined size, and the above-mentioned U-shaped spray tube is relatively close to the crystal boat, resulting in insufficient space for the gas sprayed from the first air hole on the two tube sections to mix evenly. As a result, the uniformity of gas distribution cannot be guaranteed, which may lead to uneven gas volumes obtained by different wafers, thereby adversely affecting process results

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