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A normally-off hemt device with on-chip gate bounce protection

A normally-off, internal gate technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of affecting device parasitic parameters, occupying effective area, increasing parasitic capacitance, etc.

Active Publication Date: 2022-02-18
芯众享(成都)微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that it will occupy some effective area, and trigger sampling will affect some parasitic parameters of the device, such as the general voltage sampling will increase the parasitic capacitance

Method used

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  • A normally-off hemt device with on-chip gate bounce protection
  • A normally-off hemt device with on-chip gate bounce protection
  • A normally-off hemt device with on-chip gate bounce protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A normally-off HEMT device with on-chip gate bounce protection, including a first enhanced P-GaN HEMT device as a main device, and a second enhanced P-GaN HEMT device as a bounce tube; the second The control terminal connected to the gate of the enhanced P-GaNHEMT device; the drain of the second enhanced P-GaNHEMT device is connected to the gate of the first enhanced P-GaNHEMT device; the second enhanced P-GaNHEMT The source of the device is connected to the source of the first enhancement mode P-GaN HEMT device.

[0041] Specific working principle: add a bounce tube to the main device, which can read the internal overload signal of the main device, or the external overload signal, and quickly trigger the gate voltage of the main device to return to zero, thereby turning off the main device and cutting off the cut-off , while protecting the gate of the main device from sustained overvoltage damage.

[0042] A more specific idea is to add a low withstand voltage snap-back...

Embodiment 2

[0045] The first control mode of the control terminal is that the gate of the second enhancement mode P-GaN HEMT device is connected to the cathode of the diode series assembly. When the gate of the second enhancement-mode P-GaN HEMT device is controlled by ohmic contact, the gate-source spacing of the second enhancement-mode P-GaN HEMT device is the same as that of the first enhancement-mode P-GaN HEMT device, and the threshold engineering design The threshold voltage can be made close to 0V, and the anode of the diode series component is connected to an external trigger signal.

[0046] Specific working principle: a single line is led out from the gate of the snapback tube; if the gate contact of the snapback tube is an ohmic contact, and the gate-source spacing is roughly equivalent to the main device gate-source spacing, the threshold voltage approaches 0V, which can be considered as a A positive external trigger signal can turn on the jumper, causing the gate voltage of t...

Embodiment 3

[0048] The second control mode of the control terminal is that the gate of the second enhancement mode P-GaN HEMT device is connected to the cathode of the diode series assembly. When the internal monitoring point triggers the control, the anode of the diode series assembly is connected to the drain of the first enhanced P-GaN HEMT device.

[0049] Specific working principle: the gate of the snapback transistor is connected to a certain voltage monitoring point in the chip (such as the drain of the main device), and the threshold voltage of the snapback transistor can be selected to be equal to the normal value of the voltage at this point through threshold voltage engineering. Overload conditions such as current flow or overheating cause the voltage to exceed the normal value, and the bounce transistor is turned on, causing the gate voltage of the main device to drop and turn off.

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Abstract

The invention discloses a normally-off HEMT device with on-chip gate bounce protection, comprising a first enhanced P-GaN HEMT device as a main device, and a second enhanced P-GaN HEMT device as a bounce tube; The control terminal connected to the gate of the second enhanced P-GaNHEMT device; the drain of the second enhanced P-GaNHEMT device is connected to the gate of the first enhanced P-GaNHEMT device; the second enhanced The source of the type P-GaNHEMT device is connected to the source of the first enhanced P-GaNHEMT device; the present invention makes the p-GaNHEMT device reach the ESD reliability standard, and satisfies the on-chip overload protection: the area is small, the impact on parasitic parameters Small, or controllable manipulation, to reverse it is an advantage as an adjustment mechanism.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a normally-off HEMT device with on-chip gate bounce protection. Background technique [0002] With the development of high-voltage switches and high-speed radio frequency circuits, Gallium Nitride High Electron Mobility Transistor (GaNHEMT) has become the focus of research in this field. Conventional GaNHEMT devices are all depletion mode (normally on), and the threshold voltage is <0V. Use a negative turn-on voltage. In the design of radio frequency and microwave chips, the power supply design of the negative grid voltage increases the design cost; the threshold voltage of the enhanced (normally off) HEMT is positive, and only a positive bias voltage is needed to make it work in practical applications or pinch off. In this way, the circuit design of the negative bias voltage can be eliminated, the circuit can be simplified, and the complexity of the circuit design and t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/085
CPCH01L27/0251H01L27/0266H01L27/085
Inventor 刘毅李翔肖延兵
Owner 芯众享(成都)微电子有限公司